A novel nanoheteroepitaxy method, namely, the grouped and multistep nanoheteroepitaxy (GM-NHE), is proposed to attain a high-quality gallium nitride (GaN) epilayer by metal-organic vapor phase epitaxy. This method combines the effects of sub-100 nm nucleation and multistep lateral growth by using a low-cost but unique carbon nanotube mask, which consists of nanoscale growth windows with a quasi-periodic 2D fill factor. It is found that GM-NHE can facilely reduce threading dislocation density (TDD) and modulate residual stress on foreign substrate without any regrowth. As a result, high-quality GaN epilayer is produced with homogeneously low TDD of 4.51 × 10(7) cm(-2) and 2D-modulated stress, and the performance of the subsequent 410 nm near-ultraviolet light-emitting diode is greatly boosted. In this way, with the facile fabrication of nanomask and the one-off epitaxy procedure, GaN epilayer is prominently improved with the assistance of nanotechnology, which demonstrates great application potential for high-efficiency TDD-sensitive optoelectronic and electronic devices.
Download full-text PDF |
Source |
|---|---|
| http://dx.doi.org/10.1021/acsami.6b05636 | DOI Listing |
Publication Analysis
Top Keywords
Similar Publications
Development of blue-light GaN based micro light-emitting diodes using ion implantation technology.
Discov Nano
December 2024
Department of Photonics, National Yang Ming Chiao Tung University, Hsinchu, 30010, Taiwan, ROC.
This study fabricated 10 μm chip size μLEDs of blue-light GaN based epilayers structure with different mesa processes using dry etching and ion implantation technology. Two ion sources, As and Ar, were applied to implant into the LED structure to achieve material isolation and avoid defects on the mesa sidewall caused by the plasma process. Excellent turn-on behavior was obtained in both ion-implanted samples, which also exhibited lower leakage current compared to the sample fabricated by the dry etching process.
View Article and Find Full Text PDFArticle Synopsis
- * Demonstrated low-threshold lasing in dry-etched green micro-ring cavities featuring dielectric distributed Bragg reflectors (DBRs), which enhance optical confinement and reduce lasing thresholds.
- * Achieved continuous-wave lasing at 521.7 nm with a threshold of only 0.35 kW/cm, highlighting the potential for efficient and low-threshold micro-lasers and waveguides for integrated photonic applications.
Nitrogen Complex-Driven Vacancy Cluster in Group-III Nitrides.
ACS Appl Mater Interfaces
November 2024
Samsung Display Co., LTD., Yongin-si 17113, Republic of Korea.
A series of experiments have elucidated the primary defects in group-III nitride epilayers, identifying vacancy clusters due to cation migration at interfaces to mitigate strained lattice. While the occurrence of these defects is well-documented, the underlying electronic mechanisms driving vacancy agglomeration in nitrides and their alloys remain poorly understood. In this study, we uncovered a previously unreported ground state of two metal vacancies driven by the migration of kinetically unstable nitrogen atoms using an approach.
View Article and Find Full Text PDFUltra-high brightness Micro-LEDs with wafer-scale uniform GaN-on-silicon epilayers.
Light Sci Appl
October 2024
Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, State Key Laboratory of Chemo/Biosensing and Chemometrics, Hunan Institute of Optoelectronic Integration, College of Materials Science and Engineering, School of Physics and Electronics, Hunan University, 410082, Changsha, China.
Article Synopsis
- GaN-based Micro-LEDs are seen as innovative display technology due to their high brightness and pixel density, but face challenges like sidewall damage and low light extraction efficiency.
- Researchers have developed 5 μm pixel green Micro-displays using high-quality GaN-on-Si epilayers, achieving ultra-high brightness exceeding 10 cd/m (nits).
- This advancement paves the way for large-scale production of high-resolution Micro-LED displays, capable of producing high-definition images and videos up to 1080 × 780 resolution.
Study on different isolation technology on the performance of blue micro-LEDs array applications.
Discov Nano
June 2024
Institute of Electrics, National Yang Ming Chiao Tung University, Hsinchu, 30010, Taiwan, ROC.
Article Synopsis
- * It explored the use of arsenic multi-energy implantation for electrical isolation, substituting traditional mesa etching while examining the impacts of varying ion depth profiles on electrical properties.
- * Results showed that as implantation depth increased, the LEDs' light output power and external quantum efficiency improved, but efficiency droop also increased, indicating a complex relationship between the fabrication process and LED performance.
Want AI Summaries of new PubMed Abstracts delivered to your In-box?
Enter search terms and have AI summaries delivered each week - change queries or unsubscribe any time!