Molybdenum disulfide (MoS2 ) is a promising candidate for electronic and optoelectronic applications. However, its application in light harvesting has been limited in part due to crystal defects, often related to small crystallite sizes, which diminish charge separation and transfer. Here we demonstrate a surface-engineering strategy for 2D MoS2 to improve its photoelectrochemical properties. Chemically exfoliated large-area MoS2 thin films were interfaced with eight molecules from three porphyrin families: zinc(II)-, gallium(III)-, iron(III)-centered, and metal-free protoporphyrin IX (ZnPP, GaPP, FePP, H2 PP); metal-free and zinc(II) tetra-(N-methyl-4-pyridyl)porphyrin (H2 T4, ZnT4); and metal-free and zinc(II) tetraphenylporphyrin (H2 TPP, ZnTPP). We found that the photocurrents from MoS2 films under visible-light illumination are strongly dependent on the interfacial molecules and that the photocurrent enhancement is closely correlated with the highest occupied molecular orbital (HOMO) levels of the porphyrins, which suppress the recombination of electron-hole pairs in the photoexcited MoS2 films. A maximum tenfold increase was observed for MoS2 functionalized with ZnPP compared with pristine MoS2 films, whereas ZnT4-functionalized MoS2 demonstrated small increases in photocurrent. The application of bias voltage on MoS2 films can further promote photocurrent enhancements and control current directions. Our results suggest a facile route to render 2D MoS2 films useful for potential high-performance light-harvesting applications.
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http://dx.doi.org/10.1002/cphc.201600511 | DOI Listing |
ACS Appl Mater Interfaces
December 2024
Department of Materials Science and Engineering, and State Key Laboratory of Marine Pollution, and Center of Super-Diamond and Advanced Films, City University of Hong Kong, Hong Kong S.A.R. 999077, China.
Metallic 1T phase molybdenum disulfide (MoS) is among the most promising electrode materials for supercapacitors, but its capacitance and cyclability remain to be improved to meet the constantly increasing energy storage needs in portable electronics. In this study, we present a strategy, covalent functionalization, which achieves the improvement of capacitance of metallic 1T phase MoS. Covalently functionalized by the modifier 4-bromobenzenediazonium tetrafluoroborate, the metallic MoS membrane exhibits increased interlayer spacing, slightly curled layered architecture, enhanced charge transfer, and improved adsorption capabilities toward electrolyte molecules and ions.
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December 2024
School of Optoelectronic Engineering and Instrumentation Science, Dalian University of Technology, Dalian, Liaoning, 116024, China.
The precise domain control in ferroelectric CuInPS (CIPS) remains challenging. A promising approach is by interfacing CIPS with the ferroelectric layer, but interface-driven ferroelectricity tunning mechanism remains unclear. Here, the demonstration of interfacial strain-induced ferroelectric tuning and enhancement in CIPS via ferroelectric substrate is reported by photoluminescence (PL) spectroscopy, combined with piezoresponse force microscopy (PFM) and density functional theory (DFT) calculations.
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November 2024
Shenzhen Key Laboratory of Advanced Thin Films and Applications, GuangDong Engineering Technology Research Centre of Breath Test, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China.
Prostate-specific antigen (PSA) is a well-established tumour marker for prostatic carcinoma. In this study, we present a novel, real-time, and ultrasensitive Love-mode surface acoustic wave (L-SAW) immunosensor for PSA detection enhanced by MoS@CuO-Au nanocomposite conjugation. The MoS@CuO-Au nanocomposites were analyzed by SEM, XRD, and EDS.
View Article and Find Full Text PDFRev Sci Instrum
December 2024
Tata Institute of Fundamental Research Hyderabad, Sy No 36/P, Serilingampally Mandal, Hyderabad 500046, India.
Ultra-low magnetic field sensing is emerging as a tool for materials' diagnostics, particularly for the operando studies of electrochemical systems. A magnetic metrology system having the capability of sensing fields as low as ∼1.88 pT has been setup for such studies using a commercial atomic magnetometer.
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December 2024
Zhejiang University, Hangzhou, 310027, China.
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