Growth of Well-Aligned InN Nanorods on Amorphous Glass Substrates.

Nanoscale Res Lett

Key Laboratory of Semiconductor Materials Science, Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, P. O. Box 912, Beijing, 100083, People's Republic of China.

Published: December 2016

The growth of well-aligned nanorods on amorphous substrates can pave the way to fabricate large-scale and low-cost devices. In this work, we successfully prepared vertically well-aligned c-axis InN nanorods on amorphous glass substrate by metal-organic chemical vapor deposition. The products formed directly on bare glass are randomly oriented without preferential growth direction. By inserting a GaN/Ti interlayer, the nanowire alignment can be greatly improved as indicated by scanning electron microscopy and X-ray diffraction.

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http://www.ncbi.nlm.nih.gov/pmc/articles/PMC4880805PMC
http://dx.doi.org/10.1186/s11671-016-1482-xDOI Listing

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