AI Article Synopsis
- The complexity of oxide materials has limited the purities achievable in labs, hiding their rich physical properties.
- In this study, we present a method for identifying and managing defects in MgZnO/ZnO heterostructures grown using molecular beam epitaxy, which support two-dimensional electron systems.
- Our results show that the electron mobilities in these samples exceed 1×10^6 cm^2/Vs, indicating that their crystalline quality rivals that of traditional semiconductor materials.
Article Abstract
The inherently complex chemical and crystallographic nature of oxide materials has suppressed the purities achievable in laboratory environments, obscuring the rich physical degrees of freedom these systems host. In this manuscript we provide a systematic approach to defect identification and management in oxide molecular beam epitaxy grown MgZnO/ZnO heterostructures which host two-dimensional electron systems. We achieve samples displaying electron mobilities in excess of 1 × 10(6) cm(2)/Vs. This data set for the MgZnO/ZnO system firmly establishes that the crystalline quality has become comparable to traditional semiconductor materials.
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Source |
|---|---|
| http://www.ncbi.nlm.nih.gov/pmc/articles/PMC4882538 | PMC |
| http://dx.doi.org/10.1038/srep26598 | DOI Listing |
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