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Spontaneous ripple formation in phosphorene: electronic properties and possible applications. | LitMetric

Spontaneous ripple formation in phosphorene: electronic properties and possible applications.

Nanoscale

Department of Nuclear Engineering and Radiological Sciences, University of Michigan, Michigan, 48109, USA.

Published: June 2016

AI Article Synopsis

  • The Mermin-Wagner theorem indicates that long-range order in 2D crystals is disrupted by thermal fluctuations, making them prone to corrugation or rippling.
  • Through ab initio molecular dynamics simulations, this study demonstrates that phosphorene naturally forms ripples at room temperature, with ripple height influenced by temperature and width.
  • Density functional theory calculations reveal that these ripples significantly lower the bandgap of phosphorene, suggesting potential applications in light-emitting technologies by expanding the understanding of its structural properties beyond a flat lattice.

Article Abstract

According to the Mermin-Wagner theorem and theory of elasticity, long-range order in two-dimensional (2D) crystals will be inevitably destroyed due to a thermal fluctuation. Thus, a 2D lattice prefers a corrugation meaning that a 2D crystal is easy to present a ripple. In this work, we, via employing ab initio molecular dynamics (AIMD) simulations, for the first time evidenced that the inherent dynamics of phosphorene would lead to a spontaneous formation of ripples at room temperature. The height of a ripple closely associates with the temperature and the width. Via density functional theory (DFT) calculations, we further demonstrated that the emergence of ripples would remarkably reduce the bandgap of phosphorene. Via the construction of the unique phosphorene structure, we finally found that such a rippled structure is expected to be used in the light-emitting field. These results give us further knowledge of phosphorene, which goes beyond the current scope of phosphorene limited to the flat lattice.

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Source
http://dx.doi.org/10.1039/c6nr02752kDOI Listing

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