Wide bandgap hybrid halide perovskites based on bromine and chlorine halide anions have emerged as potential candidates for various optoelectronic devices. However, these materials are relatively less explored than the iodine-based perovskites for microscopic details. We present experiment and first-principles calculations to understand the structural, optical, and electronic structure of wide bandgap CH3NH3Pb(Br1-xClx)3 (x = 0, 0.33, 0.66, and 1) 3D hybrid perovskite materials. We substituted Br(-) with Cl(-) to tune the bandgap from 2.4 eV (green emissive) to 3.2 eV (blue (UV) emissive) of these materials. We correlate our experimental results with first-principles theory and provide an insight into important parameters like lattice constants, electronic structure, excitonic binding energy (EX), dielectric constant, and reduced effective mass (μr) of charge carriers in these perovskite semiconductors. Electronic structure calculations reveal that electronic properties are mainly governed by Pb 6p and halide p orbitals. Our estimates of EX within a hydrogen model suggest that an increase in EX by increasing the Cl(-) (chlorine) concentration is mainly due to a decrease in the dielectric constant with x and almost constant value of μr close to the range of 0.07me.
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http://dx.doi.org/10.1021/acs.jpca.6b04138 | DOI Listing |
Science
January 2025
Center for Bioinspired Science and Technology, Hangzhou International Innovation Institute, Beihang University, Hangzhou, China.
Thermoelectrics have been limited by the scarcity of their constituent elements, especially telluride. The earth-abundant, wide-bandgap ( ≈ 46 ) tin sulfide (SnS) has shown promising performance in its crystal form. We improved the thermoelectric efficiency in SnS crystals by promoting the convergence of energy and momentum of four valance bands, termed quadruple-band synglisis.
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January 2025
Department of Physics and Materials Science, University of Luxembourg, Esch-sur-Alzette, L-4365, Luxembourg.
Cu(In, Ga)S demonstrates potential as a top cell material for tandem solar cells. However, achieving high efficiencies has been impeded by open-circuit voltage (V) deficits arising from In-rich and Ga-rich composition segregation in the absorber layer. This study presents a significant improvement in the optoelectronic quality of Cu(In, Ga)S films through the mitigation of composition segregation in three-stage co-evaporated films.
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January 2025
Wide Bandgap Semiconductor Technology Disciplines State Key Laboratory, Xidian University, Xi'an, 710071, China.
(AlO)(HfO) films with varying compositions were deposited on silicon substrates via plasma-enhanced atomic layer deposition (PEALD), and metal-oxide-semiconductor (MOS) capacitors were fabricated. The impact of varying induced Al content on the dielectric properties of HfO was examined through electrical measurements. The results showed that increasing Al content raised the flat-band voltage, reduced the interface state density (D), and significantly lowered the leakage current at a given voltage.
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December 2024
State Key Discipline Laboratory of Wide Bandgap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an 710071, China.
This paper presents a 35 nV/√Hz analog front-end (AFE) circuitdesigned in the UMC 40 nm CMOS technology for the acquisition of biopotential signal. The proposed AFE consists of a capacitive-coupled instrumentation amplifier (CCIA) and a combination of a programmable gain amplifier (PGA) and a low-pass filter (LPF). The CCIA includes a DC servo loop (DSL) to eliminate electrode DC offset (EDO) and a ripple rejection loop (RRL) with self-zeroing technology to suppress high-frequency ripples caused by the chopper.
View Article and Find Full Text PDFMicromachines (Basel)
December 2024
Department of Electrical, Computer and Biomedical Engineering, University of Pavia, 27100 Pavia, Italy.
Voltage reference circuits are a basic building block in most integrated microsystems, covering a wide spectrum of applications. Hence, they constitute a subject of great interest for the entire microelectronics community. MOSFET-based solutions, in particular, have emerged as the implementation of choice for realizing voltage reference circuits, given the supply voltage scaling and the ever-lower power consumption specifications in various applications.
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