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| http://dx.doi.org/10.4103/1673-5374.177719 | DOI Listing |
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In the last decade, momentous progress in lead halide perovskite (LHP) light-emitting diodes (LEDs) is witnessed as their external quantum efficiency (η) has increased from 0.1 to more than 30%. Indeed, perovskite LEDs (PeLEDs), which can in principle reach 100% internal quantum efficiency as they are not limited by the spin-statistics, are reaching their full potential and approaching the theoretical limit in terms of device efficiency.
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Valleytronics, harnessing the valley degree of freedom in the momentum space, is a potential energy-efficient approach for information encoding, manipulation, and storage. Valley degree of freedom exists in a few conventional semiconductors, but recently the emerging 2D materials, such as monolayer transition-metal dichalcogenides (TMDs), are considered more ideal for valleytronics, due to the additional protection from spin-valley locking enabled by their inversion symmetry breaking and large spin-orbit coupling. However, current limitations in the valley lifetime, operation temperature, and light-valley conversion efficiency in existing materials encumber the practical applications of valleytronics.
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