We report effective solution-processed chemical p-type doping of graphene using trifluoromethanesulfonic acid (CF3 SO3 H, TFMS), that can provide essential requirements to approach an ideal flexible graphene anode for practical applications: i) high optical transmittance, ii) low sheet resistance (70 % decrease), iii) high work function (0.83 eV increase), iv) smooth surface, and iv) air-stability at the same time. The TFMS-doped graphene formed nearly ohmic contact with a conventional organic hole transporting layer, and a green phosphorescent organic light-emitting diode with the TFMS-doped graphene anode showed lower operating voltage, and higher device efficiencies (104.1 cd A(-1) , 80.7 lm W(-1) ) than those with conventional ITO (84.8 cd A(-1) , 73.8 lm W(-1) ).
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