The dose reduction factors (DRF) for different types of lead glasses and C-arm units with x-ray tubes placed above the patient table were calculated from the results of measurements by loose thermoluminescent dosimeters (TLDs) and EYE-D dosimeters using a Rando phantom. The DRF values were analysed for different positions of routine dosimeters worn outside lead eyewear and confronted with DRFs calculated as the ratio of the dose equivalent to the eye measured with and without the eyewear. Moreover, for eye lens dosimeters designed to be worn behind lead glasses, multiplicative factors for various positions of dosimeter were derived in order to account for the differences between the doses measured on the inner side of the glasses and the dose equivalent to the eye lens. The DRFs calculated for the position of a routine dosimeter worn outside lead glasses on the band near the left eye lens are 5.6 and 5.7 for goggles and metallic glasses, respectively, while the DRFs calculated as the ratio of doses to the eyes measured with and without the eyewear are 10.2 and 9.9, respectively. Therefore, for dosimeters routinely used outside lead eyewear, the DRF calculated for the position of the dosimeter should be used. Otherwise, we can anticipate an almost two-fold underestimation of the doses. When the dosimeter is worn behind lead glasses, up to two-fold differences between the dose equivalent to the eye lens and the dose measured at the inner side of the glasses were observed depending on the dosimeter position.
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http://dx.doi.org/10.1088/0952-4746/36/2/N19 | DOI Listing |
Plant Dis
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Universidad de Chile, Departamento de Sanidad Vegetal, Facultad de Ciencias Agronomicas, Casilla 1004, Santiago, Chile, 8820000;
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Department of Microelectronics, Jiangsu University Zhenjiang Jiangsu 212013 China
Lead halide perovskite heterojunctions have been considered as important building blocks for fabricating high-performance photodetectors (PDs). However, the interfacial defects induced non-radiative recombination and interfacial energy-level misalignment induced ineffective carrier transport severely limit the performance of photodetection of resulting devices. Herein, interfacial engineering with a spin-coating procedure has been studied to improve the photodetection performance of CHNHPbI/SnO heterojunction PDs, which were fabricated by sputtering a SnO thin film on ITO glass followed by spin-coating a CHNHPbI thin film.
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Key Laboratory of Bioinorganic and Synthetic Chemistry of Ministry of Education, LIFM, GBRCE for Functional Molecular Engineering, School of Chemistry, IGCME, Sun Yat-Sen University, Guangzhou 510275, China.
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Physics and Applied Mathematics, Pakistan Institute of Engineering and Applied Sciences, Qau, Islamabad, Islamabad, 44000, PAKISTAN.
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