Single-wall carbon nanotube (SWCNT) films are ideal components for thin, flexible, and durable electronic devices. Here, we use a variety of processing approaches to fabricate SWCNT-silicon heterojunctions from both unsorted and chirality-enriched SWCNTs. Through measured structure/processing/property relationships, we quantify the influence of SWCNT purity, alignment and residual doping on device performance and diode characteristics. Our results show that mixed-type unaligned SWCNTs processed in super-acid solvents can achieve state-of-the-art performance. The devices perform comparably to those fabricated from type or chiral-purified SWCNTs, despite what appear to be significant deviations from ideal diode behavior. Our results clarify a direct route for processing nanotube-silicon heterojunctions while providing additional insight into the underlying nature of these devices.
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