Pt/WO3/FTO memristive devices with recoverable pseudo-electroforming for time-delay switches in neuromorphic computing.

A recoverable pseudo-electroforming process was discovered in Pt/WO3/FTO devices. Unlike conventional electroforming, which is usually destructive, pseudo-electroforming can be recovered when the electrical stimulation is removed. Furthermore, the time-dependent recovery process can be tuned by diverse voltage pulses applied in pseudo-electroforming; therefore, the device can be used as a time-delay switch in memristor-based neuromorphic networks. This "volatile" electroforming process can be attributed to the high oxygen vacancy concentration in the fluorine-doped tin oxide (FTO) bottom electrode, which acts as a non-blocking electrode in the resistive switching.