Photoconductive (PC) terahertz (THz) emitters are often limited by ohmic loss and Joule heating-as these effects can lead to thermal runaway and premature device breakdown. To address this, the proposed work introduces PC THz emitters based on textured InP materials. The enhanced surface recombination and decreased charge-carrier lifetimes of the textured InP materials reduce residual photocurrents, following the picosecond THz waveform generation, and this diminishes Joule heating in the emitters. A non-textured InP material is used as a baseline for studies of fine- and coarse-textured InP materials. Ultrafast pump-probe and THz setups are used to measure the charge-carrier lifetimes and THz response/photocurrent consumption of the respective materials and emitters. It is found that similar temporal and spectral characteristics can be achieved with the THz emitters, but the level of photocurrent consumption (yielding Joule heating) is greatly reduced in the textured materials.
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http://dx.doi.org/10.1038/srep23185 | DOI Listing |
Adv Mater
December 2024
Shaanxi Joint Lab of Graphene, State Key Lab Incubation Base of Photoelectric Technology and Functional Materials, International Collaborative Center on Photoelectric Technology and Nano Functional Materials, Institute of Photonics & Photon-Technology, Northwest University, Xi'an, 710069, P. R. China.
Bulk photovoltaic effect (BPVE) can break the Shockley-Queisser limit by leveraging the inherent asymmetry of crystal lattice without a junction. However, this effect is mainly confined to UV-vis spectrum due to the wide-bandgap nature of traditional ferroelectric materials, thereby limiting the exploration of the infrared light-driven efficient BPVE. Herein, giant two-photon absorption (TPA) driven BPVE is uncovered from visible to infrared in ferroelectric α-InSe utilizing wavelength-tunable terahertz (THz) emission spectroscopy.
View Article and Find Full Text PDFNanophotonics
April 2024
Laboratoire de Physique de l'Ecole Normale Supérieure, ENS, Université PSL, CNRS, Sorbonne Université, Université Paris Cité, F-75005, Paris, France.
Spintronic terahertz emitters (STEs), based on optical excitation of nanometer thick ferromagnetic/heavy metal (FM/HM) heterojunctions, have become important sources for the generation of terahertz (THz) pulses. However, the efficiency of the optical-to-THz conversion remains limited. Although optical techniques have been developed to enhance the optical absorption, no investigations have studied the application of THz cavities.
View Article and Find Full Text PDFThe dynamic range of non-coherent continuous-wave (CW) THz photomixing (PM) systems with broadband detectors can be significantly limited by various parasitic effects. Specifically, we examine the generation of parasitic (i) THz and (ii) IR radiation, and (iii) higher harmonics in CW THz PM emitters. (i) The parasitic broadband THz radiation, spanning from 100 to 250 GHz with a total output power of 20 nW, results from not perfectly clean laser spectra.
View Article and Find Full Text PDFEmitters based on photoconductive materials excited by ultrafast lasers are well-established and popular devices for THz generation. However, so far, these emitters - both photoconductive antennas and large area emitters - were mostly explored using driving lasers with moderate average powers (either fiber lasers with up to hundreds of milliwatts or Ti:Sapphire systems up to few watts). In this paper, we explore the use of high-power, MHz repetition rate Ytterbium (Yb) based oscillator for THz emission using a microstructured large-area photoconductive emitter, consist of semi-insulating GaAs with a 10 × 10 mm active area.
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