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| http://www.ncbi.nlm.nih.gov/pmc/articles/PMC4798622 | PMC |
| http://dx.doi.org/10.1186/2197-7364-2-S1-A3 | DOI Listing |
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Time-of-flight Lidars based on single-photon avalanche diode (SPAD) detector arrays are emerging as a strong candidate technology for long range three-dimensional imaging in challenging environmental conditions. However, reaching this bound requires the existence of an unbiased estimator, which does not necessarily exist for data acquired by realistic SPAD-based Lidar systems. Here, we extend our existing SPAD Lidar modelling framework to include a novel metric, which we term the 'Binomial Separation Criterion', as a means of quantifying whether a depth estimation algorithm will reach the Cramér-Rao bound (CRB).
View Article and Find Full Text PDFGenome-wide association mapping for stay-green and stem reserve mobilization traits in wheat (Triticum aestivum L.) under combined heat and drought stress.
Protoplasma
January 2025
Division of Genetics, ICAR-Indian Agricultural Research Institute, New Delhi, India.
Stay-green (SG) and stem reserve mobilization (SRM) are two significant mutually exclusive traits, which contributes to grain-filling during drought and heat stress in wheat. The current research was conducted in a genome-wide association study (GWAS) panel consisting of 278 wheat genotypes of advanced breeding lines to find the markers linked with SG and SRM traits and also to screen the superior genotypes. SG and SRM traits, viz.
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- * The study explores multidimensional photon detection to boost the efficiency of generating random numbers from individual photon events, which is key to increasing overall generation rates.
- * Using advanced technology, they successfully extract up to 20 bits per photon detection and achieve a random number generation rate of 2.067 Gbps, representing a significant technical advancement.
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- The study explores the use of nano-hole array photonic crystal structures in Ge-on-Si single photon avalanche diodes (SPADs) to enhance their performance, specifically focusing on single photon detection efficiencies (SPDE).
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We introduce the world's first SPAD family design in 130 nm SiGe BiCMOS process. At 1.8 µm, we achieved the smallest pitch on record thanks to guard-ring sharing techniques, while keeping a relatively high fill factor of 24.
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