The effect of phosphorus (P)-doping on the electrochemical performance of Si negative electrodes in lithium-ion batteries was investigated. Field-emission scanning electron microscopy was used to observe changes in surface morphology. Surface crystallinity and the phase transition of Si negative electrodes before and after a charge-discharge cycle were investigated by Raman spectroscopy and X-ray diffraction. Li insertion energy into Si was also calculated based on computational chemistry. The results showed that a low P concentration of 124 ppm has a meaningful influence on the electrochemical properties of a Si negative electrode; the cycle performance is improved by P-doping of Si. P-doping suppresses the changes in the surface morphology of a Si negative electrode and the phase transition during a charge-discharge cycle. Li insertion energy increases with an increase in the P concentration; Li insertion into P-doped Si is energetically unfavorable, which indicates that the crystal lattice of Si shrinks as a result of the replacement of some Si atoms with smaller P atoms, and therefore, it is more difficult to insert Li into P-doped Si. These results reveal that suppression of the phase transition reduces the large change in the volume of Si and prevents a Si negative electrode from disintegrating, which helps to improve the otherwise poor cycle performance of a Si electrode.
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http://dx.doi.org/10.1021/acsami.6b00386 | DOI Listing |
Heliyon
January 2025
National Institute of Materials Physics, 077125 Magurele, Ilfov, Romania.
Non-volatile electronic memory elements are very attractive for applications, not only for information storage but also in logic circuits, sensing devices and neuromorphic computing. Here, a ferroelectric film of guanine nucleobase is used in a resistive memory junction sandwiched between two different ferromagnetic films of Co and CoCr alloys. The magnetic films have an in-plane easy axis of magnetization and different coercive fields whereas the guanine film ensures a very long spin transport length, at 100 K.
View Article and Find Full Text PDFJ Neurosci
January 2025
Institute of Clinical Neuroscience and Medical Psychology, Medical Faculty and University Hospital Düsseldorf, Heinrich Heine University Düsseldorf, 40225 Germany
Recordings from Parkinson's disease (PD) patients typically show strong beta-band oscillations (13-35Hz), which can be modulated by deep brain stimulation (DBS). While high-frequency DBS (>100Hz) ameliorates motor symptoms and reduces beta activity in basal ganglia and motor cortex, the effects of low-frequency DBS (<30Hz) are less clear. Clarifying these effects is relevant for the debate about the role of beta oscillations in motor slowing, which might be causal or epiphenomenal.
View Article and Find Full Text PDFNeurosci Res
January 2025
Center for Brain Behavior and Metabolism, University of Lübeck, Germany. Electronic address:
Pronouns create cohesive links in discourse by referring to previously mentioned elements. Here, we focus on pronominalization during speech production in three experiments employing ERP and fMRI methodologies. Participants were asked to produce two short sentences describing a man or woman using an object.
View Article and Find Full Text PDFMicroscopy (Oxf)
December 2024
Green Innovation Center, Green Transformation Division, Panasonic Holdings Corporation, 3-1-1 Yagumo-Nakamachi, Moriguchi City, Osaka 570-8501, Japan.
The direct observation of the morphological changes in silicon-based negative electrode (Si-based negative electrode) materials during battery charging and discharging is useful for handling such materials and in electrode plate design. We developed an operando scanning electron microscopy (operando SEM) technique to quantitatively evaluate the expansion and contraction of Si-based negative electrode materials. A small all-solid-state lithium-ion battery was charged and discharged, and the expansion/contraction of particles while harnessing capacity was observed using SEM.
View Article and Find Full Text PDFACS Sens
January 2025
Institute of Multidisciplinary Research for Advanced Materials (IMRAM), Tohoku University, Sendai 980-8577, Japan.
The anomalous gas sensing behavior has garnered significant attention from researchers, prompting a re-evaluation of the gas sensing theory. This work focuses on inversion gas sensing behavior induced by element doping. W/Mo/Cr-doped VO(M1) samples are synthesized, and their sensing behaviors are investigated.
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