Y-shaped ZnO nanobelts are fabricated by a simple thermal evaporation method. Transmission Electron Microscopy (TEM) investigation shows that these ZnO nanobelts are crystals with twinned planes {11-21}. Convergent Beam Electron Diffraction studies show that the two sides of twinned nanobelts are O-terminated towards the twinned boundary and Zn-terminated outwards. The two branches of twinned ZnO nanobelts grow along [11-26] from the trunk and then turn to the polarization direction [0001]. The featured Y-shape morphology and TEM characterizations indicate that the growth of these novel nanostructures is driven by an unusual twinned dislocation growth mechanism.
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http://dx.doi.org/10.1038/srep22494 | DOI Listing |
J Hazard Mater
February 2024
Information Materials and Intelligent Sensing Laboratory of Anhui Province, Institutes of Physical Science and Information Technology, Anhui University, Hefei 230601, PR China; Key Laboratory of Environmental Optics and Technology, And Environmental Materials and Pollution Control Laboratory, Institute of Solid State Physics, HFIPS, Chinese Academy of Sciences, Hefei, 230031, PR China.
The identification and determination of benzene, toluene, ethylbenzene, and xylene (BTEX) has always been a formidable challenge for chemiresistive metal oxide sensors owing to their structural similarity and low reactivity, as well as the intrinsic cross sensitivity of metal oxides. In this paper, a temperature-modulated sensing strategy is proposed for the identification and determination of BTEX using a high-performance chemiresistive sensor. Ultrafine Au nanoparticle-loaded porous ZnO nanobelts as sensing materials were synthesized through an exchange reaction followed by thermal oxidation, which exhibited high response toward BTEX.
View Article and Find Full Text PDFJ Phys Chem Lett
April 2023
Beijing Key Lab of Nano-photonics and Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology, Beijing 100081, P. R. China.
The integration of optical waveguide and on-chip nanolasers source has been one of the trends in photonic devices. For on-chip nanolasers, the integration of nanowires and high antidamage ability are imperative. Herein, we realized the on-chip ultralow-threshold and wavelength-tunable lasing from alloyed CdSSe nanobelt chip that is excited by the emission from linked ZnO nanowires.
View Article and Find Full Text PDFNanomaterials (Basel)
April 2023
Department of Chemistry, University of Marburg, Hans-Meerwein Str. 4, 35032 Marburg, Germany.
ZnO nanostructures, semiconductors with attractive optical properties, are typically grown by thermal chemical vapor deposition for optimal growth control. Their growth is well investigated, but commonly results in the entire substrate being covered with identical ZnO nanostructures. At best a limited, binary growth control is achieved with masks or lithographic processes.
View Article and Find Full Text PDFJ Colloid Interface Sci
January 2023
School of Chemistry and Chemical Engineering, Harbin Institute of Technology, Harbin 150001, PR China. Electronic address:
Metal oxides are promising electrode candidates for supercapacitor due to their high theoretical capacitance, good reversibility, and low cost. However, they show inferior specific capacitance and power density because of their sluggish ion diffusion kinetics and intrinsically poor electrical conductivity within the solid phase. Herein, heterostructured ZnCoO/ZnO nanobelts are successfully prepared by using self-assembled Zn/Co-based nanosized coordination polymers as the precursors.
View Article and Find Full Text PDFNat Commun
February 2022
Institute of Nanoscience and Nanotechnology, School of Materials and Energy, Lanzhou University, 730000, Lanzhou, Gansu, China.
Piezotronics with capacity of constructing adaptive and seamless interactions between electronics/machines and human/ambient are of value in Internet of Things, artificial intelligence and biomedical engineering. Here, we report a kind of highly sensitive strain sensor based on piezotronic tunneling junction (Ag/HfO/n-ZnO), which utilizes the strain-induced piezoelectric potential to control the tunneling barrier height and width in parallel, and hence to synergistically modulate the electrical transport process. The piezotronic tunneling strain sensor has a high on/off ratio of 478.
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