Fixed vacancies (non-magnetic impurities) are placed along the centre of Ising strips in order to study the wetting behaviour in this confined system, by means of numerical simulations analysed with the aid of finite size scaling and thermodynamic integration methods. By considering strips of size L × M (L << M) where short-range competitive surface fields (H(s)) act along the M-direction, we observe localization-delocalization transitions of the interface between magnetic domains of different orientation (driven by the corresponding surface fields), which are the precursors of the wetting transitions that occur in the thermodynamic limit. By placing vacancies or equivalently non-magnetic impurities along the centre of the sample, we found that for low vacancy densities the wetting transitions are of second order, while by increasing the concentration of vacancies the transitions become of first order. Second- and first-order lines meet in tricritical wetting points (H(tric)(SW), T(tric)(W)), where H(tric)(SW) and T(Tric)(W) are the magnitude of the surface field and the temperature, respectively. In the phase diagram, tricritical points shift from the high temperature and weak surface field regime at large vacancy densities to the T --> 0, H(tric)(SW) --> 1 limit for low vacancy densities. By comparing the locations of the tricritical points with those corresponding to the case of mobile impurities, we conclude that in order to observe similar effects, in the latter the required density of impurities is much smaller (e.g. by a factor 3-5). Furthermore, a proper density of non magnetic impurities placed along the centre of a strip can effectively pin rather flat magnetic interfaces for suitable values of the competing surface fields and temperature.
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http://dx.doi.org/10.1088/0953-8984/28/12/125001 | DOI Listing |
RSC Adv
January 2025
Institute of Theoretical and Applied Research, Duy Tan University Ha Noi 100000 Vietnam
In this work, Ge vacancies and doping with transition metals (Mn and Fe) are proposed to modulate the electronic and magnetic properties of GeP monolayers. A pristine GeP monolayer is a non-magnetic two-dimensional (2D) material, exhibiting indirect gap semiconductor behavior with an energy gap of 1.34(2.
View Article and Find Full Text PDFChemosphere
November 2024
Department of Environmental Engineering, Graduate School, Konkuk University, 120 Neungdong-ro, Gwangjin-gu, Seoul, 05029, Republic of Korea; Department of Civil and Environmental Engineering, Konkuk University, 120 Neungdong-ro, Gwangjin-gu, Seoul, 05029, Republic of Korea. Electronic address:
Small Methods
September 2024
Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei, 10617, Taiwan.
Extrinsic dilute magnetic semiconductors achieve magnetic functionality through tailored interaction between a semiconducting matrix and a non-magnetic dopant. The absence of intrinsic magnetic impurities makes this approach promising to investigate the newly emerging field of 2D dilute magnetic semiconductors. Here the first realization of an extrinsic 2D DMS in Pt-doped WS is demonstrated.
View Article and Find Full Text PDFNanoscale Adv
July 2024
Universidad Nacional Autónoma de México, Centro de Nanociencias y Nanotecnología Apartado Postal 14 Ensenada Baja California Código Postal 22800 Mexico.
Controlling the electronic and magnetic properties of two-dimensional (2D) materials is a key step to make new multifunctional candidates for practical applications. In this work, defects and doping with transition metals (TMs = V, Cr, Mn, and Fe) at Ge sublattices are proposed in order to develop novel features in the hexagonal germanium arsenide (GeAs) monolayer. The pristine GeAs monolayer is a non-magnetic indirect gap semiconductor with an energy gap of 1.
View Article and Find Full Text PDFNat Commun
June 2024
Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing, China.
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