As we show in this paper, I/O has become the limiting factor in scaling down size and power toward the goal of invisible computing. Achieving this goal will require composing optimized and specialized-yet reusable-components with an interconnect that permits tiny, ultra-low power systems. In contrast to today's interconnects which are limited by power-hungry pull-ups or high-overhead chip-select lines, our approach provides a superset of common bus features but at lower power, with fixed area and pin count, using fully synthesizable logic, and with surprisingly low protocol overhead. We present , a new 4-pin, 22.6 pJ/bit/chip chip-to-chip interconnect made of two "shoot-through" rings. MBus facilitates ultra-low power system operation by implementing automatic power-gating of each chip in the system, easing the integration of active, inactive, and activating circuits on a single die. In addition, we introduce a new bus primitive: power oblivious communication, which guarantees message reception regardless of the recipient's power state when a message is sent. This disentangles power management from communication, greatly simplifying the creation of viable, modular, and heterogeneous systems that operate on the order of nanowatts. To evaluate the viability, power, performance, overhead, and scalability of our design, we build both hardware and software implementations of MBus and show its seamless operation across two FPGAs and twelve custom chips from three different semiconductor processes. A three-chip, 2.2 mm MBus system draws 8 nW of total system standby power and uses only 22.6 pJ/bit/chip for communication. This is the lowest power for any system bus with MBus's feature set.
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http://dx.doi.org/10.1145/2749469.2750376 | DOI Listing |
Nano Lett
December 2024
Tianjin Key Laboratory for Rare Earth Materials and Applications, Center for Rare Earth and Inorganic Functional Materials, School of Materials Science and Engineering, Nankai University, 300350 Tianjin, China.
Architectures based on a magnetic domain wall (DW) can store and process information at a high speed in a nonvolatile manner with ultra-low power consumption. Recently, transition-metal rare earth metal alloy-based ferrimagnets have attracted a considerable amount of attention for the ultrafast current-driven DW motion. However, the high-speed DW motion is subject to film inhomogeneity and device edge defects, causing challenges in controlling the DW motion and hindering practical application.
View Article and Find Full Text PDFSci Total Environ
December 2024
State Key Joint Laboratory of Environmental Simulation & Pollution Control, School of Environment, Beijing Normal University, Beijing 100875, China; Center for Atmospheric Environmental Studies, Beijing Normal University, Beijing 100875, China.
Iron and steel production (ISP) is one of significant atmospheric pollution emission sources in China. With the implementation of ultra-low emission (ULE) standards, a detailed and new updated emission inventory is urgently needed for better understanding of the temporal trends and spatial variation of emission characteristics. In this study, a unit-based comprehensive emission inventory of multiple hazardous air pollutants (HAPs) for the Chinese ISP spanned from 2012 to 2021, including the conventional pollutants, 13 kinds of Trace elements as well as 2 unconventional but toxic pollutants (PCDD/Fs, F), was dedicatedly developed by integrating dynamic localized emission factors with unit-based information of both the detailed activity level and abatement technology application.
View Article and Find Full Text PDFAdv Mater
December 2024
Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, TX, 78712, USA.
A synaptic memristor using 2D ferroelectric junctions is a promising candidate for future neuromorphic computing with ultra-low power consumption, parallel computing, and adaptive scalable computing technologies. However, its utilization is restricted due to the limited operational voltage memory window and low on/off current (I) ratio of the memristor devices. Here, it is demonstrated that synaptic operations of 2D InSe ferroelectric junctions in a planar memristor architecture can reach a voltage memory window as high as 16 V (±8 V) and I ratio of 10, significantly higher than the current literature values.
View Article and Find Full Text PDFMed Phys
December 2024
Siemens Healthineers AG, Forchheim, Germany.
Background: Photon counting computed tomography (PCCT) employs direct and spectrally resolved counting of individual x-ray quanta, enhancing image quality compared to the standard energy-integrating CT (EICT).
Purpose: To evaluate the quantitative improvements in CT image quality metrics by comparing the first medical PCCT with a state-of-the-art EICT.
Methods: The PCCT versus EICT noise improvement ratio R was derived from the quantum statistics of the measurement process and measured across the clinical x-ray flux range for both systems.
Nano Lett
December 2024
School of Physics and Astronomy, Faculty of Science, Monash University, Melbourne, Victoria 3800, Australia.
Ultrathin and low-loss phase-change materials (PCMs) are highly valued for their fast and effective phase transitions and applications in reconfigurable photonic chips, metasurfaces, optical modulators, sensors, photonic memories, and neuromorphic computing. However, conventional PCMs mostly suffer from high intrinsic losses in the near-infrared (NIR) region, limiting their potential for high quality factor (-factor) resonant metasurfaces. Here we present the design and fabrication of tunable bound states in the continuum (BIC) metasurfaces using the ultra-low-loss PCM SbSe.
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