We report on the observation of complex superlattices at the surface of the topological insulator Bi2Te3. Scanning tunneling microscopy reveals the existence of two different periodic structures in addition to the Bi2Te3 atomic lattice, which is found to strongly affect the local electronic structure. These three different periodicities are interpreted to result from a single small in-plane rotation of the topmost quintuple layer only. Density functional theory calculations support the observed increase in the DOS near the Fermi level, and exclude the possibility that strain is at the origin of the observed Moiré pattern. Exploration of Moiré superlattices formed by the quintuple layers of topological insulators holds great potential for further tuning of the properties of topological insulators.
Download full-text PDF |
Source |
|---|---|
| http://www.ncbi.nlm.nih.gov/pmc/articles/PMC4745016 | PMC |
| http://dx.doi.org/10.1038/srep20278 | DOI Listing |
Publication Analysis
Top Keywords
Similar Publications
Ultrahigh Exchange Bias Field/Coercive Field Ratio in In Situ Formed Two-Dimensional Magnetic Te-CrO/CrTe Heterostructures.
Adv Mater
January 2025
Hunan Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, Hunan, 410082, China.
The exchange bias (EB) effect is a fundamental magnetic phenomenon, in which the exchange bias field/coercive field ratio (|H/H|) can improve the stability of spintronic devices. Two-dimensional (2D) magnetic heterostructures have the potential to construct low-power and high-density spintronic devices, while their typically air unstable and |H/H| lesser, limiting the possibility of applications. Here, 2D CrTe nanosheets have been systematically synthesized with an in situ formed ≈2 nm-thick Te doped CrO layer (Te-CrO) on the upper surface by chemical vapor deposition (CVD) method.
View Article and Find Full Text PDFOctupolar Vortex Crystal and Toroidal Moment in Twisted Bilayer MnPSe.
Nano Lett
January 2025
Department of Physics, Arizona State University, Tempe, Arizona 85287, United States.
Experimental detection of antiferromagnetic order in two-dimensional materials is a challenging task. Identifying multidomain antiferromagnetic textures via the current techniques is even more difficult. Therefore, we investigate the higher-order multipole moments in twisted bilayer MnPSe.
View Article and Find Full Text PDFFlat Band Generation Through Interlayer Geometric Frustration in Intercalated Transition Metal Dichalcogenides.
Small
January 2025
Institute for Quantum Computing and Department of Electrical and Computer Engineering, University of Waterloo, Waterloo, ON, N2L3G1, Canada.
Electronic flat bands can lead to rich many-body quantum phases by quenching the electron's kinetic energy and enhancing many-body correlation. The reduced bandwidth can be realized by either destructive quantum interference in frustrated lattices, or by generating heavy band folding with avoided band crossing in Moiré superlattices. Here a general approach is proposed to introduce flat bands into widely studied transition metal dichalcogenide (TMD) materials by dilute intercalation.
View Article and Find Full Text PDFHighly printable, strong, and ductile ordered intermetallic alloy.
Nat Commun
January 2025
Department of Materials Science and Engineering, College of Engineering, City University of Hong Kong, Hong Kong, China.
Ordered intermetallic alloys are renowned for their impressive mechanical, chemical, and physical properties, making them appealing for various fields. However, practical applications of them have long been severely hindered due to their severe brittleness and poor fabricability. It is difficult to fabricate such materials into components with complex geometries through traditional subtractive manufacturing methods.
View Article and Find Full Text PDFPerformance Study of Ultraviolet AlGaN/GaN Light-Emitting Diodes Based on Superlattice Tunneling Junction.
Micromachines (Basel)
December 2024
State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, Xidian University, Xi'an 710071, China.
In this study, we aim to enhance the internal quantum efficiency (IQE) of AlGaN-based ultraviolet (UV) light-emitting diodes (LEDs) by using the short-period AlGaN/GaN superlattice as a tunnel junction (TJ) to construct polarized structures. We analyze in detail the effect of this polarized TJ on the carrier injection efficiency and investigate the increase in hole and electron density caused by the formation of 2D hole gas (2DHG) and 2D electron gas (2DEG) in the superlattice structure. In addition, a dielectric layer is introduced to evaluate the effect of stress changes on the tunneling probability and current spread in TJ.
View Article and Find Full Text PDFWant AI Summaries of new PubMed Abstracts delivered to your In-box?
Enter search terms and have AI summaries delivered each week - change queries or unsubscribe any time!