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http://dx.doi.org/10.1021/acsnano.6b00680 | DOI Listing |
ACS Nano
September 2019
Department of Physics , National University of Singapore, 2 Science Drive 3 , Singapore 117551 , Singapore.
Controlled substitutional doping of two-dimensional transition-metal dichalcogenides (TMDs) is of fundamental importance for their applications in electronics and optoelectronics. However, achieving -type conductivity in MoS and WS is challenging because of their natural tendency to form -type vacancy defects. Here, we report versatile growth of -type monolayer WS by liquid-phase mixing of a host tungsten source and niobium dopant.
View Article and Find Full Text PDFPhys Chem Chem Phys
February 2019
Laboratory of Theoretical and Computational Chemistry, Institute of Theoretical Chemistry, Jilin University, Changchun, 130023, China.
Sci Rep
February 2018
Department of Physics, Harbin Institute of Technology, Harbin, 150001, China.
A correction to this article has been published and is linked from the HTML version of this paper. The error has been fixed in the paper.
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