We present the calculation of the static dielectric susceptibility tensor and dipole field sums in thin molecular films in the well-defined limit of zero intermolecular overlap. Microelectrostatic and charge redistribution approaches are applied to study the evolution of dielectric properties from one to a few molecular layers in films of different conjugated molecules with organic electronics applications. Because of the conditional convergence of dipolar interactions, dipole fields depend on the shape of the sample and different values are found in the middle layer of a thick film and in the bulk. The shape dependence is eliminated when depolarization is taken into account, and the dielectric tensor of molecular films converges to the bulk limit within a few molecular layers. We quantify the magnitude of surface effects and interpret general trends among different systems in terms of molecular properties, such as shape, polarizability anisotropy, and supramolecular organization. A connection between atomistic models for molecular dielectrics and simpler theories for polarizable atomic lattices is also provided.
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http://dx.doi.org/10.1063/1.4939840 | DOI Listing |
Nat Mater
January 2025
Laboratory of Advanced Optoelectronic Materials, Suzhou Key Laboratory of Novel Semiconductor-optoelectronics Materials and Devices, College of Chemistry, Chemical Engineering and Materials Science, Soochow University, Suzhou, China.
Printing of large-area solar panels necessitates advanced organic solar cells with thick active layers. However, increasing the active layer thickness typically leads to a marked drop in the power conversion efficiency. Here we developed an organic semiconductor regulator, called AT-β2O, to tune the crystallization sequence of the components in active layers.
View Article and Find Full Text PDFInt J Biol Macromol
January 2025
Yellow Crane Tower Science and Technology Park (Group) Co., Ltd., Wuhan 430040, Hubei, China. Electronic address:
Small
January 2025
Key Laboratory of Automobile Materials of Ministry of Education and School of Materials Science and Engineering, Jilin University, Changchun, 130012, P. R. China.
Constructing a solid solution is an effective strategy for regulating the properties of composite organic semiconductors. However, there presents significant challenges in fabrication and understanding of organic solid-solution semiconductors. In this study, infinite solid-solution semiconductors are successfully achieved by integrating rod-like organic molecules, thereby overcoming the limitations of current organic composite semiconductors.
View Article and Find Full Text PDFNanotechnology
January 2025
IEMN, IEMN, Avenue Poincaré, CS60069, Villeneuve-d'Ascq, 59655, FRANCE.
InSb is a material of choice for infrared as well as spintronic devices but its integration on large lattice mismatched semi-insulating III-V substrates has so far altered its exceptional properties. Here, we investigate the direct growth of InSb on InP(111)B substrates with molecular beam epitaxial growth. Despite the lack of a thick metamorphic buffer layer for accommodation, we show that quasi-continuous thin films can be achieved using a very high Sb/In flux ratio.
View Article and Find Full Text PDFJ Phys Condens Matter
January 2025
AIMR, Tohoku University, 2-1-1, Katahira, Aoba-ku, Sendai, 980-8578, JAPAN.
Monolayer atomic thin films of group-V elements have a high potential for application in spintronics and valleytronics because of their unique crystal structure and strong spin-orbit coupling. We fabricated Sb and Bi monolayers on a SiC(0001) substrate by the molecular-beam-epitaxy method and studied the electronic structure by angle-resolved photoemission spectroscopy (ARPES) and first-principles calculations. The fabricated Sb film shows the (√3×√3)R30º superstructure associated with the formation of ⍺-Sb, and exhibits a semiconducting nature with a band gap of more than 1.
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