A conductive composite of graphene nanoribbon (GNR) stacks and epoxy is fabricated. The epoxy is filled with the GNR stacks, which serve as a conductive additive. The GNR stacks are on average 30 nm thick, 250 nm wide, and 30 μm long. The GNR-filled epoxy composite exhibits a conductivity >100 S/m at 5 wt % GNR content. This permits application of the GNR-epoxy composite for deicing of surfaces through Joule (voltage-induced) heating generated by the voltage across the composite. A power density of 0.5 W/cm(2) was delivered to remove ∼1 cm-thick (14 g) monolith of ice from a static helicopter rotor blade surface in a -20 °C environment.
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http://dx.doi.org/10.1021/acsami.5b11131 | DOI Listing |
Nature
April 2024
Key Laboratory of Artificial Structures and Quantum Control (Ministry of Education), Shenyang National Laboratory for Materials Science, School of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai, China.
Van der Waals encapsulation of two-dimensional materials in hexagonal boron nitride (hBN) stacks is a promising way to create ultrahigh-performance electronic devices. However, contemporary approaches for achieving van der Waals encapsulation, which involve artificial layer stacking using mechanical transfer techniques, are difficult to control, prone to contamination and unscalable. Here we report the transfer-free direct growth of high-quality graphene nanoribbons (GNRs) in hBN stacks.
View Article and Find Full Text PDFPhys Chem Chem Phys
July 2023
Hierachical Green-Energy Materials (Hi-GEM) Research Center, National Cheng Kung University, Tainan 701, Taiwan.
Along with the inherent remarkable properties of graphene, adatom-intercalated graphene-related systems are expected to exhibit tunable electronic properties. The metal-based atoms could facilitate multi-orbital hybridizations with the out-of-plane π-bondings on the carbon honeycomb lattice, which dominate the fundamental properties of chemisorption systems. In this work, using first-principles calculations, the feature-rich properties of alkali-metal intercalated graphene nanoribbons (GNRs) are investigated, including edge passivation, stacking configurations, intercalation sites, stability, charge density distribution, magnetic configuration, and electronic properties.
View Article and Find Full Text PDFIn this Letter, we theoretically study the topological plasmons in Su-Schrieffer-Heeger (SSH) model-based graphene nanoribbon (GNR) layers. We find that for the one-dimensional (1D) stacked case, only two topological modes with the field localized in the top or bottom layer are predicted to exist by the Zak phase. When we further expand the stacked 1D GNR layers to two-dimensional (2D) arrays in the in-plane direction, the topology is then characterized by the 2D Zak phase, which predicts the emergence of three kinds of topological modes: topological edge, surface, and corner modes.
View Article and Find Full Text PDFSmall
September 2021
Instituto de Física "Gleb Wataghin,", Universidade Estadual de Campinas, C. P. 6165, Campinas, SP, 13083-970, Brazil.
Locating and manipulating nano-sized objects to drive motion is a time and effort consuming task. Recent advances show that it is possible to generate motion without direct intervention, by embedding the source of motion in the system configuration. In this work, an alternative manner to controllably displace nano-objects without external manipulation is demonstrated, by employing spiral-shaped carbon nanotube (CNT) and graphene nanoribbon structures (GNR).
View Article and Find Full Text PDFSci Rep
May 2021
Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka, 565-0871, Japan.
The electrical transport properties of a turbostratic multilayer graphene nanoribbon (GNR) with various number of layers (1-8 layers) were investigated using a field effect transistor with a single GNR channel. In the turbostratic multilayer GNR with 5 layers or less, the carrier mobility and I/I ratio in the FETs were improved by slightly increasing the conductance with increasing the number of layers, meaning that the excellent semiconducting characteristic. The improvement of the carrier transport properties promotes by the turbostratic stacking structure.
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