We report a wavelength threshold extension, from the designed value of 3.1 to 8.9 μm, in a p-type heterostructure photodetector. This is associated with the use of a graded barrier and barrier offset, and arises from hole-hole interactions in the detector absorber. Experiments show that using long-pass filters to tune the energies of incident photons gives rise to changes in the intensity of the response. This demonstrates an alternative approach to achieving tuning of the photodetector response without the need to adjust the characteristic energy that is determined by the band structure.
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http://dx.doi.org/10.1364/OL.41.000285 | DOI Listing |
Nat Commun
January 2025
School of Physics, Key Laboratory of Quantum Materials and Devices of Ministry of Education, and Key Laboratory of MEMS of Ministry of Education, Southeast University, Nanjing, China.
The realization of room-temperature-operated, high-performance, miniaturized, low-power-consumption and Complementary Metal-Oxide-Semiconductor (CMOS)-compatible mid-infrared photodetectors is highly desirable for next-generation optoelectronic applications, but has thus far remained an outstanding challenge using conventional materials. Two-dimensional (2D) heterostructures provide an alternative path toward this goal, yet despite continued efforts, their performance has not matched that of low-temperature HgCdTe photodetectors. Here, we push the detectivity and response speed of a 2D heterostructure-based mid-infrared photodetector to be comparable to, and even superior to, commercial cooled HgCdTe photodetectors by utilizing a vertical transport channel (graphene/black phosphorus/molybdenum disulfide/graphene).
View Article and Find Full Text PDFAdv Sci (Weinh)
January 2025
College of Physics and Optoelectronic Engineering, Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, No. 1, Sub-Lane Xiangshan, Xihu District, Hangzhou, 310024, China.
The integration of mid-infrared (MIR) photodetectors with built-in encryption capabilities holds immense promise for advancing secure communications in decentralized networks and compact sensing systems. However, achieving high sensitivity, self-powered operation, and reliable performance at room temperature within a miniaturized form factor remains a formidable challenge, largely due to constraints in MIR light absorption and the intricacies of embedding encryption at the device level. Here, a novel on-chip metamaterial-enhanced, 2D tantalum nickel selenide (Ta₂NiSe₅)-based photodetector, meticulously designed with a custom-engineered plasmonic resonance microstructure to achieve self-powered photodetection in the nanoampere range is unveiled.
View Article and Find Full Text PDFSmall
December 2024
State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, China.
Broadband detection technology is crucial in the fields of astronomy and environmental surveying. Two dimensional (2D) materials have emerged as promising candidates for next-generation broadband photodetectors with the characteristics of high integration, multi-dimensional sensing, and low power consumption. Among these, 2D tellurium (Te) is particularly noteworthy due to its excellent mobility, tunable bandgap, and air stability.
View Article and Find Full Text PDFSci Adv
December 2024
Department of Chemical and Environmental Engineering, Yale University, 9 Hillhouse Avenue, New Haven, CT 06520, USA.
Nanophotonics
April 2024
Université Paris-Saclay, Centre de Nanosciences et de Nanotechnologies, 91120 Palaiseau, France.
This study reports the experimental demonstration of the first waveguide-integrated SiGe modulator using a PIN diode operating in a wide spectral range of the mid-infrared region. At the wavelength of 10 µm, an extinction ratio up to 10 dB is obtained in injection regime and 3.2 dB in depletion regime.
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