Irreversible one-dimensional (1D) epitaxial growth at small coverages via the recently suggested two-step growth protocol [Tokar and Dreyssé, Surf. Sci. 637-638, 116 (2015)] has been studied with the use of the kinetic Monte Carlo and the rate-equation techniques. It has been found that similar to the two-dimensional (2D) case the island capture zones could be accurately approximated with the Gamma probability distribution (GD). Coverage independence of the average island sizes grown at the first step that was also found in two dimensions was observed. In contrast to 2D case, the shape parameter of the GD was also found to be coverage-independent. Using these two constants as the input, an analytical approach that allowed for the description of the commonly studied statistical distributions to the accuracy of about 2% has been developed. Furthermore, it was established that the distributions of the island sizes and the interisland gaps grown via the two-step protocol were about 50% narrower than in the case of nucleation on random defects, which can be of practical importance. Equivalence between the GD shape of the island size distribution in the scaling regime and the linear dependence of the capture numbers on the island size in the rate-equation approach has been proved.
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http://dx.doi.org/10.1103/PhysRevE.92.062407 | DOI Listing |
Sci Rep
January 2025
IBM T. J. Watson Research Center, Yorktown Heights, NY, 10598, USA.
The development of high-brightness electron sources is critical to state-of-the-art electron accelerator applications like X-ray free electron laser (XFEL) and ultra-fast electron microscopy. Cesium telluride is chosen as the electron source material for multiple cutting-edge XFEL facilities worldwide. This manuscript presents the first demonstration of the growth of highly crystalized and epitaxial cesium telluride thin films on 4H-SiC and graphene/4H-SiC substrates with ultrasmooth film surfaces.
View Article and Find Full Text PDFJ Colloid Interface Sci
January 2025
College of Chemistry and Chemical Engineering, Qiqihar University, Qiqihar 161006, PR China; Heilongjiang Provincial Key Laboratory of Catalytic Synthesis for Fine Chemicals, Qiqihar University, Qiqihar 161006, PR China. Electronic address:
The establishment of heterojunctions has been demonstrated as an effective method to improve the efficiency of photocatalytic hydrogen production. Conventional heterojunctions usually have random orientation relationships, and heterointerfaces can hinder photogenerated carrier transport due to larger lattice mismatches, thus reducing the photoelectric conversion efficiency. In this study, a novel Te/InO@MXene lattice coherency heterojunction was prepared by leveraging the identical lattice spacing of InO (222) and Te (021) crystal face.
View Article and Find Full Text PDFMaterials (Basel)
January 2025
CNR-IOM-Istituto Officina dei Materiali, Consiglio Nazionale delle Ricerche, 34149 Trieste, Italy.
Hybrid systems consisting of highly transparent channels of low-dimensional semiconductors between superconducting elements allow the formation of quantum electronic circuits. Therefore, they are among the novel material platforms that could pave the way for scalable quantum computation. To this aim, InAs two-dimensional electron gases are among the ideal semiconductor systems due to their vanishing Schottky barrier; however, their exploitation is limited by the unavailability of commercial lattice-matched substrates.
View Article and Find Full Text PDFMicromachines (Basel)
December 2024
School of Electrical and Electronic Engineering, Pusan National University, Busan 46241, Republic of Korea.
We demonstrated 3.3 kV silicon carbide (SiC) PiN diodes using a trenched ring-assisted junction termination extension (TRA-JTE) with PN multi-epitaxial layers. Multiple P rings and width-modulated multiple trenches were utilized to alleviate electric-field crowding at the edges of the junction to quantitively control the effective charge (Q) in the termination structures.
View Article and Find Full Text PDFNanotechnology
January 2025
Centre for Analysis and Synthesis, NanoLund, Lund University, Box 124, Lund, 221 00, SWEDEN.
Developing a reliable procedure for the growth of III-V nanowires (NW) on silicon (Si) substrates remains a significant challenge, as current methods rely on trial-and-error approaches with varying interpretations of critical process steps such as sample preparation, Au-Si alloy formation in the growth reactor, and nanowire alignment. Addressing these challenges is essential for enabling high-performance electronic and optoelectronic devices that combine the superior properties of III-V NW semiconductors with the well-established Si-based technology. Combining conventional scalable growth methods, such as Metalorganic Chemical Vapor Deposition (MOCVD) with in situ characterization using Environmental Transmission Electron Microscopy (ETEM-MOCVD) enables a deeper understanding of the growth dynamics, if that knowledge is transferable to the scalable processes.
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