Photoelectric properties in metal ion modified DNA nanostructure.

Due to specific or as designed self-assembly, DNA nanostructures gaining popularity in various nanoscale electronic applications. Herein, a novel divalent metal ion-DNA complex known as M-DNA have been investigated for its photoelectric characteristics. The increased conductivity of M-DNA thin films is attributed to the metal ion electrical and optical properties. The gate voltage effect along with illumination on the conductivity of M-DNA demonstrates that M-DNA can be used as an active element of a field-effect transistor. The Zn DNA shows maximum conductivity of 300μS/cm at 480 nm light illumination suggest that M-DNA can be utilized in nano-opto-electronics and bio-sensing applications.