AI Article Synopsis
- The study examines the electron transport properties of a 10 nm thick Bi2Se3 topological insulator thin film, grown on mica using van der Waals epitaxy in a Hall-bar geometry.
- Weak antilocalization effects and electron-electron interactions are observed at low temperatures, revealing how the phase-coherence length increases significantly as the temperature decreases.
- The findings suggest that transport occurs through multiple channels, including topological surface and bulk states, and that the conductivity shows a logarithmic decrease at lower temperatures, highlighting the influence of electron-electron interactions on quantum conductivity corrections.
Article Abstract
The electron transport properties of a topological insulator Bi2Se3 thin film are studied in Hall-bar geometry. The film with a thickness of 10 nm is grown by van der Waals epitaxy on fluorophlogopite mica and Hall-bar devices are fabricated from the as-grown film directly on the mica substrate. Weak antilocalization and electron-electron interaction effects are observed and analyzed at low temperatures. The phase-coherence length extracted from the measured weak antilocalization characteristics shows a strong power-law increase with decreasing temperature and the transport in the film is shown to occur via coupled multiple (topological surface and bulk states) channels. The conductivity of the film shows a logarithmical decrease with decreasing temperature and thus the electron-electron interaction plays a dominant role in quantum corrections to the conductivity of the film at low temperatures.
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| http://dx.doi.org/10.1039/c5nr07296d | DOI Listing |
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