AI Article Synopsis
- The study focuses on intrinsic interface states at InAs-AlSb interfaces, particularly related to In-Sb chemical bonds.
- Researchers used an advanced tight-binding model to effectively constrain the parameters necessary for studying these materials.
- The findings indicate the presence of a heavy-hole-like interface state that is stable over a wide range of band offset values between InSb and InAs.
Article Abstract
We examine the formation of intrinsic interface states bound to the plane of In-Sb chemical bonds at InAs-AlSb interfaces. Careful parameterization of the bulk materials in the frame of the extended-basis spds (*)tight-binding model and recent progress in predictions of band offsets severely limit the span of tight-binding parameters describing this system. We find that a heavy-hole-like interface state bound to the plane of In-Sb bonds exists for a large range of values of the InSb-InAs band offset.
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| http://dx.doi.org/10.1088/0953-8984/28/4/045001 | DOI Listing |
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