Flexible synthesized MoS2 transistors are advanced to perform at GHz speeds. An intrinsic cutoff frequency of 5.6 GHz is achieved and analog circuits are realized. Devices are mechanically robust for 10,000 bending cycles.
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http://dx.doi.org/10.1002/adma.201504309 | DOI Listing |
Materials (Basel)
January 2025
Faculty of Mechanical Engineering, Institute of Materials Science and Engineering, Lodz University of Technology, 1/15 Stefanowskiego St., 90-924 Lodz, Poland.
The development of new graphene-based materials necessitates the application of suitable material imaging techniques, especially for the identification of defects in the graphene structure and its continuity. For this purpose, it is natural to use one of the main properties of graphene-electrical conductivity. In this work, we prepare a 9 cm large-area monolayer graphene membrane on porous scaffolding sealed with either GO or rGO.
View Article and Find Full Text PDFACS Nano
January 2025
BK21 Graduate Program in Intelligent Semiconductor Technology, Seoul 03722, Republic of Korea.
MoS, one of the most researched two-dimensional semiconductor materials, has great potential as the channel material in dynamic random-access memory (DRAM) due to the low leakage current inherited from the atomically thin thickness, high band gap, and heavy effective mass. In this work, we fabricate one-transistor-one-capacitor (1T1C) DRAM using chemical vapor deposition (CVD)-grown monolayer (ML) MoS in large area and confirm the ultralow leakage current of approximately 10 A/μm, significantly lower than the previous report (10 A/μm) in two-transistor-zero-capacitor (2T0C) DRAM based on a few-layer MoS flake. Through rigorous analysis of leakage current considering thermionic emission, tunneling at the source/drain, Shockley-Read-Hall recombination, and trap-assisted tunneling (TAT) current, the TAT current is identified as the primary source of leakage current.
View Article and Find Full Text PDFAcc Chem Res
January 2025
Laboratory for Chemistry and Life Science (CLS), Institute of Integrated Research, Institute of Science Tokyo, 4259 Nagatsuta, Midori-ku, Yokohama 226-8501, Japan.
ConspectusThe design of properties and functions of molecular assemblies requires not only a proper choice of building blocks but also control over their packing arrangements. A highly versatile unit in this context is a particular type of triptycene with substituents at the 1,8,13-positions, called tripodal triptycene, which offers predictable molecular packing and multiple functionalization sites, both at the opposite 4,5,16- or 10 (bridgehead)-positions. These triptycene building blocks are capable of two-dimensional (2D) nested hexagonal packing, leading to the formation of 2D sheets, which undergo one-dimensional (1D) stacking into well-defined "2D+1D" structures.
View Article and Find Full Text PDFSci Rep
January 2025
School of Information Technology, Jiangsu Open University, Nanjing, 210017, China.
Because of its dimensional characteristics, two-dimensional (2D) materials exhibit many special properties. The key to researching their features is to prepare high-quality larger-area monolayer 2D materials. Metal-assisted mechanical exfoliation method offers the possibility.
View Article and Find Full Text PDFACS Nano
December 2024
Key Laboratory of Mesoscopic Chemistry of MOE, School of Chemistry and Chemical Engineering, Nanjing University, Nanjing, Jiangsu, 210023, China.
As the keystones of molecular electronics, high-quality nanodielectric layers are challenging to assemble due to the strictest criteria for their reliability and uniformity over a large area. Here, we report a strained poly(4-vinylphenol) monolayer, ready to be stacked to form defect-free wafer-scale nanodielectrics. The thickness of the nanodielectrics can be precisely adjusted in integral multiples of the 1.
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