Barettin, 8,9-dihydrobarettin, bromoconicamin and a novel brominated marine indole were isolated from the boreal sponge Geodia barretti collected off the Norwegian coast. The compounds were evaluated as inhibitors of electric eel acetylcholinesterase. Barettin and 8,9-dihydrobarettin displayed significant inhibition of the enzyme, with inhibition constants (Ki) of 29 and 19 μM respectively towards acetylcholinesterase via a reversible noncompetitive mechanism. These activities are comparable to those of several other natural acetylcholinesterase inhibitors of marine origin. Bromoconicamin was less potent against acetylcholinesterase, and the novel compound was inactive. Based on the inhibitory activity, a library of 22 simplified synthetic analogs was designed and prepared to probe the role of the brominated indole, common to all the isolated compounds. From the structure-activity investigation it was shown that the brominated indole motif is not sufficient to generate a high acetylcholinesterase inhibitory activity, even when combined with natural cationic ligands for the acetylcholinesterase active site. The four natural compounds were also analysed for their butyrylcholinesterase inhibitory activity in addition and shown to display comparable activities. The study illustrates how both barettin and 8,9-dihydrobarettin display additional bioactivities which may help to explain their biological role in the producing organism. The findings also provide new insights into the structure-activity relationship of both natural and synthetic acetylcholinesterase inhibitors.
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http://dx.doi.org/10.1039/c5ob02416a | DOI Listing |
Materials (Basel)
June 2023
Dipartimento di Ingegneria Industriale, Università degli Studi di Roma "Tor Vergata", Via del Politecnico, 00133 Rome, Italy.
The synthesis of crystals with a high surface-to-volume ratio is essential for innovative, high-performance electronic devices and sensors. The easiest way to achieve this in integrated devices with electronic circuits is through the synthesis of high-aspect-ratio nanowires aligned vertically to the substrate surface. Such surface structuring is widely employed for the fabrication of photoanodes for solar cells, either combined with semiconducting quantum dots or metal halide perovskites.
View Article and Find Full Text PDFNanomaterials (Basel)
June 2023
Daniele Barettin of Electronic Engineering, Università Niccoló Cusano, 00133 Rome, Italy.
The main intent of this paper is to present an exhaustive description of the most relevant mathematical models for the electromechanical properties of heterostructure quantum dots. Models are applied both to wurtzite and zincblende quantum dot due to the relevance they have shown for optoelectronic applications. In addition to a complete overview of the continuous and atomistic models for the electromechanical fields, analytical results will be presented for some relevant approximations, some of which are unpublished, such as models in cylindrical approximation or a cubic approximation for the transformation of a zincblende parametrization to a wurtzite one and vice versa.
View Article and Find Full Text PDFNanomaterials (Basel)
May 2023
Faculty of Physics, St. Petersburg State University, Universitetskaya Embankment 13B, 199034 St. Petersburg, Russia.
We present a study with a numerical model based on k→·p→, including electromechanical fields, to evaluate the electromechanical and optoelectronic properties of single GaAs quantum dots embedded in direct band gap AlGaAs nanowires. The geometry and the dimensions of the quantum dots, in particular the thickness, are obtained from experimental data measured by our group. We also present a comparison between the experimental and numerically calculated spectra to support the validity of our model.
View Article and Find Full Text PDFNanomaterials (Basel)
April 2023
CEMES-CNRS and Université de Toulouse, 29 rue Jeanne Marvig, BP 94347, F-31055 Toulouse, CEDEX 4, France.
A possible solution for the realization of high-efficiency visible light-emitting diodes (LEDs) exploits InGaN-quantum-dot-based active regions. However, the role of local composition fluctuations inside the quantum dots and their effect of the device characteristics have not yet been examined in sufficient detail. Here, we present numerical simulations of a quantum-dot structure restored from an experimental high-resolution transmission electron microscopy image.
View Article and Find Full Text PDFNanomaterials (Basel)
January 2023
CEMES-CNRS and Université de Toulouse, 29 rue Jeanne Marvig, BP 94347, CEDEX 4, F-31055 Toulouse, France.
We exploit the three-dimensional (3D) character of the strain field created around InGaN islands formed within the multilayer structures spaced by a less than 1-nm-thick GaN layer for the creation of spatially correlated electronically coupled quantum dots (QDs). The laterally inhomogeneous vertical out-diffusion of In atoms during growth interruption is the basic mechanism for the formation of InGaN islands within as-deposited 2D layers. An anisotropic 3D strain field created in the first layer is sufficient to justify the vertical correlation of the islands formed in the upper layers spaced by a sufficiently thin GaN layer.
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