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Efficient hysteresis-less bilayer type CH₃NH₃PbI₃ perovskite hybrid solar cells. | LitMetric

Efficient hysteresis-less bilayer type CH₃NH₃PbI₃ perovskite hybrid solar cells.

Nanotechnology

Functional Crystallization Center (ERC), Department of Chemical Engineering, Kyung Hee University, 1732 Deogyeong-daero, Giheung-gu, Yongin-si, Gyeonggi-do 446-701, Korea.

Published: January 2016

AI Article Synopsis

  • Researchers created bilayer hybrid solar cells using the perovskite material CH3NH3PbI3 (MAPbI3) through a one-step spin-coating method with different solvent solutions.
  • The HI-bilayer solar cells outperformed the DMSO-bilayer cells, achieving higher open-circuit voltage, short-circuit current density, and overall power conversion efficiency.
  • The improvements in the HI-bilayer devices are attributed to better crystal quality, leading to fewer recombination losses and traps in the material compared to the DMSO-bilayer devices.*

Article Abstract

Bilayer type CH3NH3PbI3 (MAPbI3) perovskite hybrid solar cells were fabricated via a one-step spin-coating process by using solubility controlled MAPbI3 solutions of MAPbI3-DMSO (dimethyl sulfoxide) and MAPbI3-DMF (N, N-dimethylformamide)-HI. The best DMSO-bilayer device showed 1.07 ± 0.02 V V(oc) (open-circuit voltage), 20.2 ± 0.1 mA cm(-2) J(sc) (short-circuit current density), 68 ± 2% FF (fill factor), and 15.2 ± 0.3% η (overall power conversion efficiency) under the forward scan direction and 1.07 ± 0.02 V V(oc), 20.4 ± 0.1 mA cm(-2) J(sc), 70 ± 3% FF, and 15.9 ± 0.4% η under the reverse scan direction. The best HI-bilayer device had 1.08 ± 0.02 V V(oc), 20.6 ± 0.1 mA cm(-2) J(sc), 75 ± 1% FF, and 17.2 ± 0.2% η under the forward scan direction and 1.08 ± 0.02 V V(oc), 20.6 ± 0.1 mA cm(-2) J(sc), 76 ± 2% FF, and 17.4 ± 0.3% η under the reverse scan direction. The deviation of average device efficiency (η(avg)) of 20 DMSO samples and 20 HI samples was 14.2 ± 0.95% and 16.2 ± 0.85%, respectively. Therefore, the HI-bilayer devices exhibited better device efficiency and smaller J-V (current density-voltage) hysteresis with respect to the scan direction than the DMSO-bilayer devices due to the reduced recombination and traps by the formation of a purer and larger MAPbI3 perovskite crystalline film.

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Source
http://dx.doi.org/10.1088/0957-4484/27/2/024004DOI Listing

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