Resonant energy transfer between patterned InGaN/GaN quantum wells and CdSe/ZnS quantum dots.
Nanoscale
State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China.
Published: January 2016
We explore an easy method for preparation of a hybrid device of a photonic crystal InGaN/GaN quantum well (QW) and colloidal quantum dots using conventional photolithography. It is demonstrated from electroluminescence spectra that Förster resonance energy transfer takes place efficiently between the photonic crystal InGaN/GaN QW and CdSe/ZnS colloidal quantum dots. From the photoluminescence decay of the InGaN/GaN QW, the largest Förster resonance energy transfer efficiency between the photonic crystal GaN quantum well and colloidal quantum dots is measured as 88% and the corresponding Förster-resonance-energy-transfer fraction reached 42%. An easy approach is explored to realize a highly efficient electrically driven colloidal quantum dot device using the Förster-resonance-energy-transfer mechanism.
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