Dislocation scatterings in p-type Si(1-x)Ge(x) under weak electric field.

We present a theoretical model which describes hole mobility degradation by charged dislocations in p-type Si(1-x)Ge(x). The complete analytical expression of the dislocation mobility is calculated from the momentum relaxation time of hole carriers under weak electric field. The obtained dislocation mobility shows a T(3/2)/λ relation and is proportional to the germanium density x. We also suggest a criterion for negating scatterings by dislocations in terms of the controllable parameters such as acceptor dopant density, dislocation density, temperature, and Ge density x, etc.