The transport properties of Ge-doped single GaN nanowires are investigated, which exhibit a weak localization effect as well as universal conductance fluctuations at low temperatures. By analyzing these quantum interference effects, the electron phase coherence length was determined. Its temperature dependence indicates that in the case of highly doped nanowires electron-electron scattering is the dominant dephasing mechanism, while for the slightly doped nanowires dephasing originates from Nyquist-scattering. The change of the dominant scattering mechanism is attributed to a modification of the carrier confinement caused by the Ge-doping. The results demonstrate that the phase coherence length can be tuned by the donor concentration making Ge-doped GaN nanowires an ideal model system for studying the influence of impurities on quantum-interference effects in mesoscopic and nanoscale systems.
Download full-text PDF |
Source |
|---|---|
| http://dx.doi.org/10.1021/acs.nanolett.5b02332 | DOI Listing |
Publication Analysis
Top Keywords
Similar Publications
Quantized Acoustoelectric Floquet Effect in Quantum Nanowires.
Phys Rev Lett
November 2024
Department of Physics, IQIM, California Institute of Technology, Pasadena, California 91125, USA.
External coherent fields can drive quantum materials into nonequilibrium states, revealing exotic properties that are unattainable under equilibrium conditions-an approach known as "Floquet engineering." While optical lasers have commonly been used as the driving fields, recent advancements have introduced nontraditional sources, such as coherent phonon drives. Building on this progress, we demonstrate that driving a metallic quantum nanowire with a coherent wave of terahertz phonons can induce an electronic steady state characterized by a persistent quantized current along the wire.
View Article and Find Full Text PDFGallium nitride-based nanowires (NWs) overcome heteroepitaxy limits, enabling GaN-on-silicon devices, and offer high sensitivity for detection, sensing, and photocatalysis. Additional nanowire coating enhances their performance, protects against photoadsorption, and enables control over structural and optical properties. In this work, we investigate core-shell GaN-(Al/Hf)O nanowires, which meet the aforementioned expectations.
View Article and Find Full Text PDFSelf-powered triboelectric sensor using GaN nanowires and stress concentration structure.
Nanoscale
December 2024
Department of Electronic and Information Materials Engineering, Division of Advanced Materials Engineering, and Research Center of Advanced Materials Development, Jeonbuk National University, Jeonju 54896, Republic of Korea.
Article Synopsis
- - Rapid advancements in the internet of things (IoT) have led to the development of various health monitoring technologies, requiring an efficient power supply for operation.
- - The paper discusses self-powered triboelectric sensors (TESs) made from GaN nanowires and polydimethylsiloxane (PDMS), designed to imitate human skin layers to enhance performance.
- - The TESs demonstrated a significant output with a maximum voltage of 14.7 V and a power density of 63.7 mW when touched, exceeding previous performance benchmarks.
An integrated photocatalytic redox architecture for simultaneous overall conversion of CO and HO toward CH and HO.
Sci Bull (Beijing)
November 2024
Key Laboratory for Power Machinery and Engineering of Ministry of Education, Research Center for Renewable Synthetic Fuel, School of Mechanical Engineering, Shanghai Jiao Tong University, Shanghai 200240, China. Electronic address:
Solar-driven overall conversion of CO and HO into fuels and chemicals shows an ultimate strategy for carbon neutrality yet remains a huge challenge. Herein, an integrated photocatalytic redox architecture of Zn NPs/GaN Nanowires (NWs)/Si is explored for light-driven overall conversion of CO and HO into CH and HO simultaneously without any external sacrificial agents and additives. The as-designed architecture affords a benchmark CH activity of 189 mmol g h with a high selectivity of 93.
View Article and Find Full Text PDFHigh-Quality Epitaxial Cobalt-Doped GaN Nanowires on Carbon Paper for Stable Lithium-Ion Storage.
Molecules
November 2024
College of Science, Jinling Institute of Technology, Nanjing 211169, China.
Due to its distinctive structure and unique physicochemical properties, gallium nitride (GaN) has been considered a prospective candidate for lithium storage materials. However, its inferior conductivity and unsatisfactory cycle performance hinder the further application of GaN as a next-generation anode material for lithium-ion batteries (LIBs). To address this, cobalt (Co)-doped GaN (Co-GaN) nanowires have been designed and synthesized by utilizing the chemical vapor deposition (CVD) strategy.
View Article and Find Full Text PDFWant AI Summaries of new PubMed Abstracts delivered to your In-box?
Enter search terms and have AI summaries delivered each week - change queries or unsubscribe any time!