AI Article Synopsis

  • The study focuses on the unique properties of the Aurivillius phase Bi3.6V2O10, specifically its defect chemistry and the ability to control its different structural phases.
  • The bismuth oxide layer in Bi4V2O11 can accommodate many Bi vacancies without altering the high-temperature structure, but as the temperature decreases, it transitions through several phases, including an orthorhombic B-phase and an oxygen-vacancy ordered A-phase at room temperature.
  • This research reveals a novel charge ordering transition involving cations V(4+) and V(5+) and highlights the dynamic nature of oxide anions, which shift between layers, affecting layer compositions during cooling and quenching processes.

Article Abstract

The fluorite-like [Bi2O2](2+) layer is a fundamental building unit in a great variety of layered compounds. Here in this contribution, we presented a comprehensive study on an unusual Aurivillius phase Bi3.6V2O10 with respect to its defect chemistry and polymorphism control as well as implications for fast oxide ion transport at lower temperatures. The bismuth oxide layer in Bi4V2O11 is found to tolerate a large number of Bi vacancies without breaking the high temperature prototype I4/mmm structure (γ-phase). On cooling, an orthorhombic distortion occurs to the γ-phase, giving rise to a different type of phase (B-phase) in the intermediate temperature region. Cooling to room temperature causes a further transition to an oxygen-vacancy ordered A-phase, which is accompanied by the charge ordering of V(4+) and V(5+) cations, providing magnetic (d(1)) and nonmagnetic (d(0)) chains along the a axis. This is a novel charge ordering transition in terms of the concomitant change of oxygen coordination. Interestingly, upon quenching, both the γ- and B-phase can be kinetically trapped, enabling the structural probing of the two phases at ambient temperature. Driven by the thermodynamic forces, the oxide anion in the γ-phase undergoes an interlayer diffusion process to reshuffle the compositions of both Bi-O and V-O layers.

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Source
http://dx.doi.org/10.1021/acs.inorgchem.5b01964DOI Listing

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