Conventional techniques to form selective surface energy regions on rigid inorganic substrates are not suitable for polymer interfaces due to sensitive and soft limitation of intrinsic polymer properties. Therefore, there is a strong demand for finding a novel and compatible method for polymeric surface energy modification. Here, by employing the confined photo-catalytic oxidation method, we successfully demonstrate full polymer filed-effect transistors fabricated through four-step spin-coating process on a flexible polymer substrate. The approach shows negligible etching effect on polymeric film. Even more, the insulating property of polymeric dielectric is not affected by the method, which is vital for polymer electronics. Finally, the self-aligned full polymer field-effect transistors on the flexible polymeric substrate are fabricated, showing good electrical properties and mechanical flexibility under bending tests.
Download full-text PDF |
Source |
---|---|
http://www.ncbi.nlm.nih.gov/pmc/articles/PMC4620563 | PMC |
http://dx.doi.org/10.1038/srep15770 | DOI Listing |
ACS Nano
September 2024
Department of Chemical and Biological Engineering, Seoul National University, Seoul 08826, Republic of Korea.
Chromatic confocal sensor-based on-machine measurement is effective for identifying and compensating for form errors of the ultra-precisely machined components. In this study, an on-machine measurement system was developed for an ultra-precision diamond turning machine to generate microstructured optical surfaces, for which the sensor probe adopts a uniform spiral scanning motion. To avoid the tedious spiral center alignment, a self-alignment method was proposed without additional equipment or artefact, which identified the deviation of the optical axis to the spindle axis by matching the measured surface points and the designed surface.
View Article and Find Full Text PDFNanoscale
February 2022
School of Materials Science and Engineering, State Centre for International Cooperation on Designer Low-Carbon and Environmental Materials, Zhengzhou University, Zhengzhou, 450001, China.
Two-dimensional hexagonal boron nitride (hBN) atomic crystals are excellent charge scattering screening interlayers for advanced electronic devices. Although wafer-scale single crystalline hBN monolayer films have been demonstrated on liquid Au and solid Cu (110) and (111) vicinal surfaces, their reproducible growth still remains challenging. Here, we report the facile self-aligned stitching growth of centimeter-scale quasi-single-crystalline hBN monolayer films through synergistic chemical vapor deposition growth kinetics and liquid Cu rheological kinetics control.
View Article and Find Full Text PDFACS Nano
December 2019
Université Grenoble Alpes, CNRS, Institut NEEL UPR2940 , F-38054 Grenoble , France.
Semiconductor-superconductor hybrid systems have outstanding potential for emerging high-performance nanoelectronics and quantum devices. However, critical to their successful application is the fabrication of high-quality and reproducible semiconductor-superconductor interfaces. Here, we realize and measure axial Al-Ge-Al nanowire heterostructures with atomically precise interfaces, enwrapped by an ultrathin epitaxial Si layer further denoted as Al-Ge/Si-Al nanowire heterostructures.
View Article and Find Full Text PDFNanotechnology
November 2019
Pritzker School of Molecular Engineering, The University of Chicago, 5801 South Ellis Avenue, Chicago, IL 60637, United States of America.
Directed self-assembly of block copolymers and self-aligned double patterning are two commonly used pitch scaling techniques to increase the density of lithographic features. In this work, both of these pitch scaling techniques were combined, enabling patterning at even higher densities. In this process, directed self-assembly of a high-χ block copolymer was used to form a line/space pattern, which served as a template for mandrels.
View Article and Find Full Text PDFEnter search terms and have AI summaries delivered each week - change queries or unsubscribe any time!