An optimized vertical organic permeable-base transistor (OPBT) competing with the best organic field-effect transistors in performance, while employing low-cost fabrication techniques, is presented. The OPBT stands out by its excellent power efficiency at the highest frequencies.
Download full-text PDF |
Source |
|---|---|
| http://dx.doi.org/10.1002/adma.201502788 | DOI Listing |
Publication Analysis
Top Keywords
Similar Publications
Field and Thermal Emission Limited Charge Injection in Au-C60-Graphene van der Waals Vertical Heterostructures for Organic Electronics.
ACS Appl Nano Mater
June 2023
Transport at Nanoscale Interfaces Laboratory, Empa - Swiss Federal Laboratories for Materials Science and Technology, Überlandstrasse 129, CH-8600 Dübendorf, Switzerland.
Among the family of 2D materials, graphene is the ideal candidate as top or interlayer electrode for hybrid van der Waals heterostructures made of organic thin films and 2D materials due to its high conductivity and mobility and its inherent ability of forming neat interfaces without diffusing in the adjacent organic layer. Understanding the charge injection mechanism at graphene/organic semiconductor interfaces is therefore crucial to develop organic electronic devices. In particular, Gr/C60 interfaces are promising building blocks for future n-type vertical organic transistors exploiting graphene as tunneling base electrode in a two back-to-back Gr/C60 Schottky diode configuration.
View Article and Find Full Text PDFEfficient and low-voltage vertical organic permeable base light-emitting transistors.
Nat Mater
July 2021
Dresden Integrated Center for Applied Physics and Photonic Materials (IAPP) and Institute for Applied Physics, Technische Universität Dresden, Dresden, Germany.
Organic light-emitting transistors, three-terminal devices combining a thin-film transistor with a light-emitting diode, have generated increasing interest in organic electronics. However, increasing their efficiency while keeping the operating voltage low still remains a key challenge. Here, we demonstrate organic permeable base light-emitting transistors; these three-terminal vertical optoelectronic devices operate at driving voltages below 5.
View Article and Find Full Text PDFVertical Organic Thin-Film Transistors with an Anodized Permeable Base for Very Low Leakage Current.
Adv Mater
May 2019
Dresden Integrated Center for Applied Physics and Photonic Materials (IAPP), Technische Universität Dresden, 01062, Dresden, Germany.
The organic permeable base transistor (OPBT) is currently the fastest organic transistor with a transition frequency of 40 MHz. It relies on a thin aluminum base electrode to control the transistor current. This electrode is surrounded by a native oxide layer for passivation, currently created by oxidation in air.
View Article and Find Full Text PDFNon-Linear Self-Heating in Organic Transistors Reaching High Power Densities.
Sci Rep
June 2018
Dresden Integrated Center for Applied Physics and Photonic Materials (IAPP), Technische Universität Dresden, Nöthnitzer Str. 61, 01187, Dresden, Germany.
The improvement of the performance of organic thin-film transistors is driven by novel materials and improved device engineering. Key developments are a continuous increase of the charge carrier mobility, a scale-down of transistor dimensions, and the reduction of contact resistance. Furthermore, new transistor designs such as vertical devices are introduced to benefit from drastically reduced channel length while keeping the effort for structuring moderate.
View Article and Find Full Text PDFA Pulse-Biasing Small-Signal Measurement Technique Enabling 40 MHz Operation of Vertical Organic Transistors.
Sci Rep
May 2018
Chair for Circuit Design and Network Theory (CCN), Technische Universität Dresden, Helmholtzstr. 18, 01069, Dresden, Germany.
Organic/polymer transistors can enable the fabrication of large-area flexible circuits. However, these devices are inherently temperature sensitive due to the strong temperature dependence of charge carrier mobility, suffer from low thermal conductivity of plastic substrates, and are slow due to the low mobility and long channel length (L). Here we report a new, advanced characterization circuit that within around ten microseconds simultaneously applies an accurate large-signal pulse bias and a small-signal sinusoidal excitation to the transistor and measures many high-frequency parameters.
View Article and Find Full Text PDFWant AI Summaries of new PubMed Abstracts delivered to your In-box?
Enter search terms and have AI summaries delivered each week - change queries or unsubscribe any time!