AI Article Synopsis
- The study focuses on microwave-induced resistance oscillations and zero resistance states in p-type semiconductors, specifically investigating a two-dimensional hole gas in a Ge/SiGe quantum well.
- It establishes a universal formula for magnetoresistance that reveals the positioning of oscillation minima and includes a phase shift of 1/4 cycle, indicating that these behaviors are consistent and reliant on radiation and cyclotron frequencies.
- The research also explores the impact of two types of holes (light and heavy) interacting with radiation, showing that their differing effective masses lead to an interference effect in the calculated magnetoresistance.
Article Abstract
We report on a theoretical study about the microwave-induced resistance oscillations and zero resistance states when dealing with p-type semiconductors and holes instead of electrons. We consider a high-mobility two-dimensional hole gas hosted in a pure Ge/SiGe quantum well. Similarly to electrons we obtain radiation-induced resistance oscillations and zero resistance states. We analytically deduce a universal expression for the irradiated magnetoresistance, explaining the origin of the minima positions and their 1/4 cycle phase shift. The outcome is that these phenomena are universal and only depend on radiation and cyclotron frequencies. We also study the possibility of having simultaneously two different carriers driven by radiation: light and heavy holes. As a result the calculated magnetoresistance reveals an interference profile due to the different effective masses of the two types of carriers.
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| http://dx.doi.org/10.1088/0953-8984/27/41/415801 | DOI Listing |
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