AI Article Synopsis
- The study reports that etching the surface of GaN-based green LEDs with H3PO4 solution enhances their optical and electrical properties.
- By varying the etching time from 0 to 20 minutes, researchers were able to control the size and density of nano-sized etch pits, improving light extraction efficiency due to better photon escape angles.
- However, excessive etching beyond 5 minutes led to increased leakage current and degraded electrical performance due to larger etch pit densities.
Article Abstract
We report the improvement in optical and electrical properties of GaN-based green light-emitting diodes (LEDs) with nano-sized etch pits formed by the surface chemical etching. In order to control the density and sizes of etch pits formed on top surface of green LEDs, H3PO4 solution is used as a etchant with different etching time. When the etching time was increased from 0 min to 20 min, both the etch pit size and density were gradually increased. The improvement of extraction efficiency of LEDs using surface etching method can be attributed to the enlarged escape angle of generated photon by roughened p-GaN surface. The finite-difference time-domain (FDTD) simulation results well agreed with experimentally observed results. Moreover, the LED with etched p-GaN surface for 5 min shows the lowest leakage current value and the further increase of etching time resulting in increase of densities of the large-sized etch pit makes the degradation of electrical properties of LEDs.
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| http://dx.doi.org/10.1166/jnn.2015.10363 | DOI Listing |
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