Analysis of Resistance and Surface Recombination Velocities by Contact Coverage for Optimizing Electrical Loss in c-Si Local Back Contact.

Recently, the importance of solar cell research has emerged due to emerging social issues such as environmental pollution problems and rising oil prices. Accordingly, each company is studying to make solar cell of high efficiency. In order to fabricate high-efficiency solar cells, the two major techniques have to be applied on the rear. One is complete passivation of the surface using a thermal oxide and the other one is the part that comes in contact with the electrode doped partially LBSF (Local BSF) formation. In this paper, LBC technology which is usually applied for high efficiency crystalline silicon solar cell, applied to mass productive solar cell to achieve high open circuit voltage and short circuit current with low surface recombination from rear side. Thermal SiO2/SiN(x) double layer which has superior thermal stability is formed on rear surface as passivation layer, then 1% of the whole rear surface area is locally contacted with aluminum. Finally, the cell has been fired at high temperature and the cell process has complete. The fabricated LBC cells conversion efficiency was 18.0% with 625 mV of open-circuit voltage (V(oc)), 37.58 mA/cm2 of current density (J(sc)), 76.3% of fillfactor (FF) at 5% contact coverage, respectively.