We propose an electrostatically-actuated microelectromechanical digital-to-analog converter (M-DAC) device with low actuation voltage. The spring structures of the silicon-based M-DAC device were monolithically fabricated using parylene-C. Because the Young's modulus of parylene-C is considerably lower than that of silicon, the electrostatic microactuators in the proposed device require much lower actuation voltages. The actuation voltage of the proposed M-DAC device is approximately 6 V, which is less than one half of the actuation voltages of a previously reported M-DAC equipped with electrostatic microactuators. The measured total displacement of the proposed three-bit M-DAC is nearly 504 nm, and the motion step is approximately 72 nm. Furthermore, we demonstrated that the M-DAC can be employed as a mirror platform with discrete displacement output for a noncontact surface profiling system.

Download full-text PDF

Source
http://www.ncbi.nlm.nih.gov/pmc/articles/PMC4610465PMC
http://dx.doi.org/10.3390/s150921567DOI Listing

Publication Analysis

Top Keywords

m-dac device
12
digital-to-analog converter
8
spring structures
8
actuation voltage
8
electrostatic microactuators
8
actuation voltages
8
m-dac
6
low-actuation voltage
4
voltage mems
4
mems digital-to-analog
4

Similar Publications

We propose an electrostatically-actuated microelectromechanical digital-to-analog converter (M-DAC) device with low actuation voltage. The spring structures of the silicon-based M-DAC device were monolithically fabricated using parylene-C. Because the Young's modulus of parylene-C is considerably lower than that of silicon, the electrostatic microactuators in the proposed device require much lower actuation voltages.

View Article and Find Full Text PDF

Want AI Summaries of new PubMed Abstracts delivered to your In-box?

Enter search terms and have AI summaries delivered each week - change queries or unsubscribe any time!