AI Article Synopsis
- The study investigates how charge transport, defects, and ferroelectric properties are linked in K0.5Na0.5NbO3 (KNN) ceramics, particularly when doped with manganese (Mn).
- At room temperature, hole transport predominates in KNN, but doping with Mn reduces this conduction, resulting in a less leaky ferroelectric hysteresis loop.
- At high temperatures, the movement of ionized oxygen vacancies becomes the main factor in conduction, and their concentration increases with more Mn doping, enhancing KNN's potential applications.
Article Abstract
The relationship between charge transport, defects and ferroelectric response is established for K0.5Na0.5NbO3 (KNN) and Mn-doped KNN ceramics. At room temperature the conduction in KNN is associated with hole transport and can be suppressed by Mn doping. Because of that a less leaky ferroelectric hysteresis loop is obtained for Mn-doped KNN. At high temperatures the conduction is dominated by the motion of ionized oxygen vacancies, the concentration of which increases with Mn doping. This work adds relevant information on KNN and leverages its potential application.
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| http://dx.doi.org/10.1039/c5cp02883c | DOI Listing |
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