Nanoscale Res Lett
Department of Materials Science, Fudan University, Shanghai, 200433, China.
Published: December 2015
One-side semihydrogenated monolayers of carbon, silicon, germanium, and their binary compounds with different configurations of hydrogen atoms are investigated by density functional theory. Among three considered configurations, zigzag, other than the most studied chair configuration, is energetically the most favorable structure of one-side semihydrogenation. Upon semihydrogenation, the semimetallic silicene, germanene, and SiGe become semiconductors, while the band gap in semiconducting SiC and GeC is reduced. Semihydrogenated silicene, germanene, SiGe, and GeC with chair configuration are found to be ferromagnetic semiconductors. For semihydrogenated SiC, it is ferromagnetic when all hydrogen atoms bond with silicon atoms, while an antiferromagnetic coupling is predicted when all hydrogen atoms bond with carbon atoms. The effect of interatomic distance between two neighboring magnetic atoms to the ferromagnetic or antiferromagnetic coupling is studied. For comparison, properties of one-side and both-side fully hydrogenated group-IV monolayers are also calculated. All fully hydrogenated group-IV monolayers are nonmagnetic semiconductors with band gaps larger than those of their semihydrogenated counterparts.
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http://dx.doi.org/10.1186/s11671-015-1040-y | DOI Listing |
Nanoscale
March 2025
School of Science, RMIT University, GPO Box 2476, Melbourne, Victoria 3001, Australia.
Layered two-dimensional (2D) materials are promising materials for piezoelectric and optoelectronic devices due to the introduction of new and interesting properties not seen in the single layers alone. In particular, the group-IV monochalcogenides (MX, M = Ge/Sn and X = S/Se) are highly piezoelectric layered materials which have outstanding optical adsorption properties in the isolated monolayer form. It is possible that combinations of MX monolayers, in a bilayer or heterobilayer system, could exhibit properties that are different to their monolayer counterparts.
View Article and Find Full Text PDFRSC Adv
November 2024
Department of Physics, OSED, Key Laboratory of Low Dimensional Condensed Matter Physics (Department of Education of Fujian Province), Xiamen University Xiamen 361005 China
The two-dimensional (2D) hexagonal group IV-V family has attracted significant attention due to their unique properties and potential applications in electronics, spintronics, and photocatalysis. In this study, we report the discovery of a stable tetragonal allotrope, termed the Td4 phase, of 2D IV-V monolayers through a structural search utilizing an adaptive genetic algorithm. We investigate the geometric structures, structural stabilities, and band structures of the Td4-phase 2D IV-V monolayers (where IV = Si, Ge, Sn; V = P, As, Sb) based on the first-principles calculations.
View Article and Find Full Text PDFACS Omega
October 2024
Graduate School of Natural and Applied Science, Ankara University, Ankara 06110, Turkey.
Strong anisotropy exhibited by materials, particularly in their low-dimensional forms, is a highly intriguing characteristic. In this study, we investigate the effects of geometrical potential and thermodynamics on the electronic properties of monolayer monochalcogenide charge carriers. First, the geometrical potential is introduced in a monolayer structure.
View Article and Find Full Text PDFJ Phys Condens Matter
October 2024
Cavendish Laboratory, University of Cambridge, Cambridge, United Kingdom.
Atomically thin group IV monochalcogenides or phosphorene analogues are a promising family of materials. Theoretical calculations predict that monolayers (MLs) should be semiconducting, ferroelectric and ferroelastic at room temperature, exhibit large charge mobilities and large non-linear optical response. Yet, experimental studies of these systems are scarce because of the difficulty to produce such MLs.
View Article and Find Full Text PDFBeilstein J Nanotechnol
September 2024
Computational Materials and Photonics (CMP), Department of Electrical Engineering and Computer Science, University of Kassel, Kassel, Germany.
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