Using flexible aliphatic chains to link conjugated molecular semiconductors affords a polymeric material that possesses defined conjugated segments but extended covalent connectivity, which enhances crystallinity and thermal stability in field-effect transistors and bulk heterojunction solar-cell devices when used as an additive.
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Ultrathin indium oxide films show great potential as channel materials of complementary metal oxide semiconductor back-end-of-line transistors due to their high carrier mobility, smooth surface, and low leakage current. However, it has severe thermal stability problems (unstable and negative threshold voltage shifts at high temperatures). In this paper, we clarified how the improved crystallinity of indium oxide by using ultrahigh-temperature rapid thermal O annealing could reduce donor-like defects and suppress thermal-induced defects, drastically enhancing thermal stability.
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Interdisciplinary Laboratory for Advanced Materials (LIMAV), Materials Science and Engineering Graduate Program (PPGCM), Federal University of Piauí (UFPI), Teresina, PI, Brazil.
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The Key Laboratory of Mariculture, Ministry of Education, Ocean University of China, Qingdao, China.
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