Voltage-gated proton (H(v)1) channels, a singular voltage sensing domain.

FEBS Lett

Centro Interdisciplinario de Neurociencia de Valparaíso, Facultad de Ciencias, Universidad de Valparaíso, Valparaíso 2360103, Chile. Electronic address:

Published: November 2015

AI Article Synopsis

  • Voltage-gated proton channels (Hv1) help remove protons from inside cells when their concentration rises, showing high selectivity for protons.
  • Unlike traditional voltage-gated ion channels, Hv1 doesn't have a separate pore domain; instead, protons pass through its voltage-sensing domain (VSD) when activated by depolarization and increased internal proton levels.
  • This article presents an updated perspective on how Hv1 channels activate, comparing them to other voltage-sensing ion channels, while also addressing the role of the transmembrane segment S4 in proton movement.

Article Abstract

The main role of voltage-gated proton channels (Hv1) is to extrude protons from the intracellular milieu when, mediated by different cellular processes, the H(+) concentration increases. Hv1 are exquisitely selective for protons and their structure is homologous to the voltage sensing domain (VSD) of other voltage-gated ion channels like sodium, potassium, and calcium channels. In clear contrast to the classical voltage-dependent channels, Hv1 lacks a pore domain and thus permeation necessarily occurs through the voltage sensing domain. Hv1 channels are activated by depolarizing voltages, and increases in internal proton concentration. It has been proposed that local conformational changes of the transmembrane segment S4, driven by depolarization, trigger the molecular rearrangements that open Hv1. However, it is still unclear how the electromechanical coupling is achieved between the VSD and the potential pore, allowing the proton flux from the intracellular to the extracellular side. Here we provide a revised view of voltage activation in Hv1 channels, offering a comparative scenario with other voltage sensing channels domains.

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Source
http://dx.doi.org/10.1016/j.febslet.2015.08.003DOI Listing

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