Here we report a wafer-scale graphene/P(VDF-TrFE)/graphene multilayer for light-weight, flexible and fast-switched broadband modulation applications. The P(VDF-TrFE) film not only significantly reduces the sheet resistance of graphene throughout heavy doping of ∼0.8 × 10(13) cm(-2) by nonvolatile ferroelectric dipoles, but also acts as an efficient electro-optic (EO) layer. Such multilayered structural integration with remarkable ferroelectric polarization, high transparency (>90%), low sheet resistance (∼302 Ω□(-1)), and excellent mechanic flexibility shows the potential of a flexible modulation application over a broad range of wavelengths. Moreover, the derived device also exhibits strong field-induced EO modulation even under bending and one large Pockels coefficient (∼54.3 pm V(-1)) is obtained. Finally, the graphene and ferroelectric hybrid demonstrates a fast switching time (∼2 μs) and works well below low sheet resistance level over a long time. This work gives insights into the potential of graphene and ferroelectric hybrid structures, enabling future exploration on next-generation high-performance, flexible transparent electronics and photonics.
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http://dx.doi.org/10.1039/c5nr03020j | DOI Listing |
ACS Nano
January 2025
Department of Physics, JC STEM Lab of Energy and Materials Physics, City University of Hong Kong, Hong Kong 999077, P. R. China.
Solid polymer electrolytes (SPEs) are promising candidates for lithium metal batteries (LMBs) owing to their safety features and compatibility with lithium metal anodes. However, the inferior ionic conductivity and electrochemical stability of SPEs hinder their application in high-voltage solid-state LMBs (HVSSLMBs). Here, a strategy is proposed to develop a dual-anion-rich solvation structure by implementing ferroelectric barium titanate (BTO) nanoparticles (NPs) and dual lithium salts into poly(vinylidene fluoride) (PVDF)-based SPEs for HVSSLMBs.
View Article and Find Full Text PDFNat Commun
January 2025
School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore, 639798, Singapore.
Hardware implementation of reconfigurable and nonvolatile photoresponsivity is essential for advancing in-sensor computing for machine vision applications. However, existing reconfigurable photoresponsivity essentially depends on the photovoltaic effect of p-n junctions, which photoelectric efficiency is constrained by Shockley-Queisser limit and hinders the achievement of high-performance nonvolatile photoresponsivity. Here, we employ bulk photovoltaic effect of rhombohedral (3R) stacked/interlayer sliding tungsten disulfide (WS) to surpass this limit and realize highly reconfigurable, nonvolatile photoresponsivity with a retinomorphic photovoltaic device.
View Article and Find Full Text PDFNat Commun
December 2024
Key Laboratory for Quantum Materials of Zhejiang Province, Department of Physics, School of Science, Westlake University, 18 Shilongshan Road, Hangzhou, 310024, Zhejiang Province, China.
Extending ferroelectric materials to two-dimensional limit provides versatile applications for the development of next-generation nonvolatile devices. Conventional ferroelectricity requires materials consisting of at least two constituent elements associated with polar crystalline structures. Monolayer graphene as an elementary two-dimensional material unlikely exhibits ferroelectric order due to its highly centrosymmetric hexagonal lattices.
View Article and Find Full Text PDFNanomaterials (Basel)
December 2024
High-Power Converter Systems (HLU), Technical University of Munich (TUM), 80333 Munich, Germany.
In this paper, a new label-free DNA nanosensor based on a top-gated (TG) metal-ferroelectric-metal (MFM) graphene nanoribbon field-effect transistor (TG-MFM GNRFET) is proposed through a simulation approach. The DNA sensing principle is founded on the dielectric modulation concept. The computational method employed to evaluate the proposed nanobiosensor relies on the coupled solutions of a rigorous quantum simulation with the Landau-Khalatnikov equation, considering ballistic transport conditions.
View Article and Find Full Text PDFAdv Mater
December 2024
Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing, 100081, China.
Through the stacking technique of 2D materials, the interfacial polarization can be switched by an interlayer sliding, known as sliding ferroelectricity, which is advantageous in ultra-thin thickness, high switching speed, and high fatigue resistance. However, uncovering the relationship between the sliding path and the polarization state in rhombohedral-stacked materials remains a challenge, which is the key to 2D sliding ferroelectricity. Here, layer-dependent multidirectional sliding ferroelectricity in rhombohedral-stacked InSe (γ-InSe) is reported via dual-frequency resonance tracking piezoresponse force microscopy and conductive atomic force microscopy.
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