AI Article Synopsis

  • Graphene nanoribbons (GNRs) are promising for nanoelectronics, chemical sensing, and electrical interconnects, yet a fast, low-cost fabrication method is still needed for producing high-quality GNRs of various shapes.
  • * A new tip-based nanofabrication method using a heated AFM tip allows for the deposition of polymer nanowires as an etch mask to create GNRs through oxygen plasma etching.
  • * The resulting GNRs are characterized with Raman spectroscopy and I-V measurements, showing sheet resistances in line with previous values, and the method is compatible with current nanofabrication processes, paving the way for advanced electronic devices.

Article Abstract

Graphene nanoribbons (GNRs) have promising applications in future nanoelectronics, chemical sensing and electrical interconnects. Although there are quite a few GNR nanofabrication methods reported, a rapid and low-cost fabrication method that is capable of fabricating arbitrary shapes of GNRs with good-quality is still in demand for using GNRs for device applications. In this paper, we present a tip-based nanofabrication method capable of fabricating arbitrary shapes of GNRs. A heated atomic force microscope (AFM) tip deposits polymer nanowires atop a CVD-grown graphene surface. The polymer nanowires serve as an etch mask to define GNRs through one step of oxygen plasma etching similar to a photoresist in conventional photolithography. Various shapes of GNRs with either linear or curvilinear features are demonstrated. The width of the GNR is around 270 nm and is determined by the width of the depositing polymer nanowire, which we estimate can be scaled down 15 nms. We characterize our TBN-fabricated GNRs using Raman spectroscopy and I-V measurements. The measured sheet resistances of our GNRs fall within the range of 1.65 kΩ/□ - 2.64 kΩ/□, in agreement with previously reported values. Furthermore, we determined the high-field breakdown current density of GNRs to be approximately 2.94×10 A/cm. This TBN process is seamlessly compatible with existing nanofabrication processes, and is particularly suitable for fabricating GNR based electronic devices including next generation DNA sequencing technologies and beyond silicon field effect transistors.

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Source
http://www.ncbi.nlm.nih.gov/pmc/articles/PMC4527583PMC
http://dx.doi.org/10.1039/C5RA04257GDOI Listing

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