Silicon, arguably the most important technological semiconductor, is predicted to exhibit a range of new and interesting properties when grown in the hexagonal crystal structure. To obtain pure hexagonal silicon is a great challenge because it naturally crystallizes in the cubic structure. Here, we demonstrate the fabrication of pure and stable hexagonal silicon evidenced by structural characterization. In our approach, we transfer the hexagonal crystal structure from a template hexagonal gallium phosphide nanowire to an epitaxially grown silicon shell, such that hexagonal silicon is formed. The typical ABABAB... stacking of the hexagonal structure is shown by aberration-corrected imaging in transmission electron microscopy. In addition, X-ray diffraction measurements show the high crystalline purity of the material. We show that this material is stable up to 9 GPa pressure. With this development, we open the way for exploring its optical, electrical, superconducting, and mechanical properties.
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http://dx.doi.org/10.1021/acs.nanolett.5b01939 | DOI Listing |
ACS Nano
December 2024
Department of Materials Science and Engineering, Ulsan National Institute of Science and Technology, Ulsan 44919, Republic of Korea.
With reduced dimensionality and a high surface area-to-volume ratio, two-dimensional (2D) semiconductors exhibit intriguing electronic properties that are exceptionally sensitive to surrounding environments, including directly interfacing gate dielectrics. These influences are tightly correlated to their inherent behavior, making it critical to examine when extrinsic charge carriers are intentionally introduced to the channel for complementary functionality. This study explores the physical origin of the competitive transition between intrinsic and extrinsic charge carrier conduction in extrinsically -doped MoS, highlighting the central role of interactions of the channel with amorphous gate dielectrics.
View Article and Find Full Text PDFAdv Mater
December 2024
School of Electronic Science and Engineering, College of Engineering and Applied Sciences, National Laboratory of Solid-State Microstructures, and Collaborative Innovation Center of Advanced Microstructure, Nanjing University, Nanjing, 210023, China.
2D transition-metal dichalcogenide (TMDC) semiconductors represent the most promising channel materials for post-silicon microelectronics due to their unique structure and electronic properties. However, it remains challenging to synthesize wide-bandgap TMDCs monolayers featuring large areas and high performance simultaneously. Herein, highly oriented WS monolayers are reproducibly synthesized through a templated growth strategy on vicinal C/A-plane sapphire wafers.
View Article and Find Full Text PDFSensors (Basel)
December 2024
College of Physics and Electronic Engineering, Hainan Normal University, Haikou 571158, China.
This study explores the fabrication of ZnO-SiO composite films on silicon substrates via a sol-gel method combined with spin-coating, followed by annealing at various temperatures. The research aims to enhance the UV emission and photoelectric properties of the films. XRD showed that the prepared ZnO sample has a hexagonal structure.
View Article and Find Full Text PDFMicron
February 2025
Department of Physics and Astronomy, University of Pennsylvania, Philadelphia, PA 19104, USA. Electronic address:
Two-dimensional (2D) materials have many applications ranging from heterostructure electronics to nanofluidics and quantum technology. In order to effectively utilize 2D materials towards these ends, they must be transferred and integrated into complex device geometries. In this report, we investigate two conventional methods for the transfer of 2D materials: viscoelastic stamping with polydimethylsiloxane (PDMS) and a heated transfer with poly bis-A carbonate (PC).
View Article and Find Full Text PDFEntropy (Basel)
October 2024
Management College, Wuhan Donghu University, Wuhan 430212, China.
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