Dinaphthothiophene has been reported as a promising p-type semiconductor. The development of high-performance n-type semiconductors is highly desirable. The introduction of an imide group into polycyclic aromatic hydrocarbons can lower their LUMO levels to meet the basic requirement of n-type organic semiconductor materials. In this work, we have synthesized four imide-modified dinaphthothiophenes and dinaphthothiophenedioxides. Their optoelectronic properties have been investigated. Their low-lying LUMO levels make them potential n-type semiconductor candidates.
Download full-text PDF |
Source |
---|---|
http://dx.doi.org/10.1021/acs.joc.5b01341 | DOI Listing |
Nanoscale
March 2025
Shanghai Institute of Technical Physics, Chinese Academy of Science, Shanghai 200080, China.
BiTe recently emerges as a promising candidate material for the next generation of mid-wave to long-wave infrared photodetection owing to its exceptionally narrow bandgap (approximately 0.2 eV) and the favorable photoelectronic properties. In particular, its topological insulator structure is safeguarded by time-reversal symmetry, leading to electronic structures with distinct surface and bulk states as well as distinctive optoelectronic properties.
View Article and Find Full Text PDFSmall
March 2025
Department of Physics, National Taiwan University, Taipei, 106, Taiwan.
In this study, the first attempt is made to implement conjugated polymer-based self-assembled monolayer (SAM), poly[3-(6-carboxyhexyl) thiophene-2,5-diyl] (P3HT-COOH), is implemented as the hole transport layer (HTL) in fabricatiing organic photovoltaics (OPVs). The scanning tunneling microscopy (STM) results show that those P3HT-COOH molecules with periodic carboxylic acid anchoring groups pack periodically on the indium tin oxide (ITO) surface and form a monolayer. Further, this monolayer is smooth and dense with a polar feature that minimizes defects, forms an excellent interface with the photoactive layer, and tunes the work function of ITO beneficial for hole extraction.
View Article and Find Full Text PDFAdv Sci (Weinh)
March 2025
Department of Materials Science and Engineering, Yonsei University, Seoul, 03722, Republic of Korea.
The emergence of two-dimensional (2D) materials has catalyzed significant advancements in the fields of piezotronics and piezo-phototronics, owing to their exceptional mechanical, electronic, and optical properties. This review provides a comprehensive examination of key 2D piezoelectric and piezo-phototronic materials, including transition metal dichalcogenides, hexagonal boron nitride (h-BN), and phosphorene, with an emphasis on their unique advantages and recent research progress. The underlying principles of piezotronics and piezo-phototronics in 2D materials is discussed, focusing on the fundamental mechanisms which enable these phenomena.
View Article and Find Full Text PDFLangmuir
March 2025
College of Engineering and Applied Sciences, State Key Laboratory of Analytical Chemistry for Life Science, and Jiangsu Key Laboratory of Artificial Functional Materials, Nanjing University, Nanjing 210093, China.
Noble metal nanoarrays have become essential in fields such as bioanalysis, catalysis, and optoelectronics. Their unique properties, often tuned through precise control of the size, morphology, and metal composition, have driven significant advancements. This research introduces atomic force microscopy (AFM)-assisted nanoxerography as a versatile technique for fabricating customizable noble metal nanoarrays.
View Article and Find Full Text PDFMaterials (Basel)
February 2025
Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing 100081, China.
A topological insulator with large bulk-insulating behavior and high electron mobility of the surface state is needed urgently, not only because it would be a good platform for studying topological surface states but also because it is a prerequisite for potential future applications. In this work, we demonstrated that tin (Sn) or indium (In) dopants could be introduced into a BiSbTeSe single crystal. The impacts of the dopants on the bulk-insulating property and electron mobility of the surface state were systematically investigated by electrical transport measurements.
View Article and Find Full Text PDFEnter search terms and have AI summaries delivered each week - change queries or unsubscribe any time!