A low-power source, such as a gain-switched laser diode, usually requires several amplification stages to reach sufficient power levels. When operating in burst mode, a correct input burst shape must be determined in order to compensate for gain saturation of all amplifier stages. In this paper we report on closed-form equations that enable saturation compensation in multiamplifier setups, which eliminates the need for an adaptive feedback loop. The theoretical model is then evaluated in an experimental setup.
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- High-speed quantum key distribution (QKD) systems are using gain-switched semiconductor lasers (GSSL) and Sagnac interferometers due to their efficiency and cost-effectiveness.
- However, the finite extinction ratio of GSSL can lead to a time-dependent side-channel that can compromise security by leaking information between the output polarization states of light pulses.
- The study explores this vulnerability, tests various countermeasures, and presents a mathematical framework to evaluate their effects on secure key rates, ultimately offering practical recommendations for enhancing QKD security.
The typical optical pulse from a gain-switched semiconductor laser diode (LD) usually consists of a first-spike (FS) component and a quasi-steady-state (QSS) lasing component. For the stability and accuracy in some specific applications of sensing and detection, it is necessary to achieve a smooth QSS component without the FS component (regarded as spike noise). This Letter reports a technique to smooth the optical pulse shape from gain-switched LDs via stepped electric pulse, which can eliminate or suppress the FS component effectively, without any postprocessing.
View Article and Find Full Text PDFCorrigendum to "Numerical simulation of the magnetically gain-switched chemical oxygen-iodine laser" [Heliyon 8(9) September 2022, Article e10530].
Heliyon
April 2024
Key Laboratory of Chemical Lasers, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, Dalian, 116023, PR China.
[This corrects the article DOI: 10.1016/j.heliyon.
View Article and Find Full Text PDFWe present an erratum to our Letter [Opt. Lett.48, 6344 (2023)10.
View Article and Find Full Text PDFIn this Letter, we report for the first time to our knowledge a 2 mJ-level 2.09 µm Ho:YAG regenerative amplifier (RA) seeded by the first-stage Ho-doped fiber (HDF) preamplifier of a gain-switched laser diode (GSLD). After the single-pass power amplifier (SPPA), the output of a 2.
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