The Me-cAAC:-stabilized dimer of silicon disulfide (SiS2 ) has been isolated in the molecular form as (Me-cAAC:)2 Si2 S4 (2) at room temperature [Me-cAAC:=cyclic alkyl(amino) carbene]. Compound 2 has been synthesized from the reaction of (Me-cAAC:)2 Si2 with elemental sulfur in a 1:4 molar ratio under oxidative addition. This is the smallest molecular unit of silicon disulfide characterized by X-ray crystallography, electron ionization mass spectrometry, and NMR spectroscopy. Structures with three sulfur atoms arranged around a silicon atom are known; however, 2 is the first structurally characterized silicon-sulfur compound containing one terminal and two bridging sulfur atoms at each silicon atom. Compound 2 shows no decomposition after storing for three months in an inert atmosphere at ambient temperature. The bonding of 2 has been further studied by theoretical calculations.
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http://dx.doi.org/10.1002/chem.201502092 | DOI Listing |
J Colloid Interface Sci
December 2024
Faculty of Printing, Packaging Engineering and Digital Media Technology, Xi'an, University of Technology, Xi'an 710048, PR China.
The use of toxic resists and complex procedures has impeded the resolution and quality of micro/nanofabrication on virtually arbitrary substrates via photolithography. To fabricate a precise and high-resolution pattern, a sericin nanofilm-based coating was developed by reducing disulfide bonds and subsequently assembling sericin protein. Upon exposure to ultraviolet (UV) light, intermolecular amide bonds in sericin are cleaved through the action of a reducing agent, allowing the reduced sericin (rSer) coating to exhibit the functional ability to generate diverse geometric micro/nanopatterns through photomask-governed photolithography.
View Article and Find Full Text PDFAdv Mater
December 2024
School of Electronic Science and Engineering, College of Engineering and Applied Sciences, National Laboratory of Solid-State Microstructures, and Collaborative Innovation Center of Advanced Microstructure, Nanjing University, Nanjing, 210023, China.
2D transition-metal dichalcogenide (TMDC) semiconductors represent the most promising channel materials for post-silicon microelectronics due to their unique structure and electronic properties. However, it remains challenging to synthesize wide-bandgap TMDCs monolayers featuring large areas and high performance simultaneously. Herein, highly oriented WS monolayers are reproducibly synthesized through a templated growth strategy on vicinal C/A-plane sapphire wafers.
View Article and Find Full Text PDFNanoscale
December 2024
Boston University, Department of Mechanical Engineering, Boston, MA 02215, USA.
We measure the out-of-plane shear modulus of few-layer graphene (FLG) by a blister test. During the test, we employed a monolayer molybdenum disulfide (MoS) membrane stacked onto FLG wells to facilitate the separation of FLG from the silicon oxide (SiO) substrate. Using the deflection profile of the blister, we determine an average shear modulus of 0.
View Article and Find Full Text PDFNanophotonics
August 2024
University College London, London, UK.
Dielectric metasurfaces open new avenues in nonlinear optics through their remarkable capability of boosting frequency conversion efficiency of nonlinear optical interactions. Here, a metasurface consisting of a square array of cruciform-shaped silicon building blocks covered by a monolayer MoS is proposed. By designing the metasurface so that it supports optical bound states in the continuum (BICs) at the fundamental frequency and second harmonic, nearly 600× enhancement of the second-harmonic generation (SHG) in the MoS monolayer as compared to that of the same MoS monolayer suspended in air is achieved.
View Article and Find Full Text PDFNanophotonics
January 2024
National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba 305-0044, Japan.
2D materials such as transition metal dichalcogenides (TMDCs) are a new class of atomic-layer materials possessing optical and electric properties that significantly depend on the number of layers. Electronic transitions can be manipulated in artificial resonant electromagnetic (EM) fields using metasurfaces and other designed nanostructures. Here, we demonstrate prominently resonant enhancement in the photoluminescence (PL) of atomic monolayer, WS, doped with a small quantity of Mo.
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