Scanning reflection ion microscopy in a helium ion microscope.

Reflection ion microscopy (RIM) is a technique that uses a low angle of incidence and scattered ions to form an image of the specimen surface. This paper reports on the development of the instrumentation and the analysis of the capabilities and limitations of the scanning RIM in a helium ion microscope (HIM). The reflected ions were detected by their "conversion" to secondary electrons on a platinum surface. An angle of incidence in the range 5-10° was used in the experimental setup. It was shown that the RIM image contrast was determined mostly by surface morphology but not by the atomic composition. A simple geometrical analysis of the reflection process was performed together with a Monte Carlo simulation of the angular dependence of the reflected ion yield. An interpretation of the RIM image formation and a quantification of the height of the surface steps were performed. The minimum detectable step height was found to be approximately 5 nm. RIM imaging of an insulator surface without the need for charge compensation was successfully demonstrated.